2SJ552STL-E

更新时间： 2024-01-11 08:32:38

品牌	Logo	应用领域
瑞萨 - RENESAS		晶体晶体管场效应晶体管
页数	文件大小	规格书
9页	96K
描述
Silicon P Channel MOS FET

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数据手册

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2SJ552STL-E 数据手册

2SJ552(L), 2SJ552(S)

Main Characteristics

Power vs. Temperature Derating

Maximum Safe Operation Area

–1000

–300

–100

10 µs

–30

–10

–3

–1

Operation in

this area is

limited by R_{DS (on)}

–0.3

–0.1

Ta = 25°C

100

150

200

–0.1 –0.3

–1

–3

–10 –30 –100

Case Temperature Tc (°C)

Drain to Source Voltage V_DS(V)

Typical Output Characteristics

Typical Transfer Characteristics

–50

–40

–30

–20

–10

–50

–40

–30

–20

–10

–8 V

–10 V

–4.5 V

V_DS= –10 V

Pulse Test

–4 V

–6 V

–5 V

–3.5 V

–3 V

25°C

Tc = 75°C

V_GS= –2.5 V

–25°C

–2

–4

–6

–8

–10

–1

–2

–3

–4

–5

Drain to Source Voltage V_DS(V)

Gate to Source Voltage V_GS(V)

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

Static Drain to Source on State Resistance

vs. Drain Current

–2.0

Pulse Test

0.5

–1.6

–1.2

–0.8

–0.4

0.2

0.1

V_GS= –4 V

I_D= –20 A

–10 A

0.05

–10 V

0.02

0.01

–5 A

–2 A

–4

–8

–12

–16

–20

–1

–2

–5 –10 –20

–50 –100

Gate to Source Voltage V_GS(V)

Drain Current I_D(A)

Rev.4.00 Sep 07, 2005 page 3 of 8

1 234 5 6 7...9

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