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2SJ399ZF-TL PDF预览

2SJ399ZF-TL

更新时间: 2024-02-16 18:51:50
品牌 Logo 应用领域
日立 - HITACHI 晶体晶体管开关光电二极管
页数 文件大小 规格书
7页 39K
描述
Power Field-Effect Transistor, 0.2A I(D), 30V, 7.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

2SJ399ZF-TL 技术参数

生命周期:Transferred包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.29Is Samacsys:N
配置:SINGLE最小漏源击穿电压:30 V
最大漏极电流 (ID):0.2 A最大漏源导通电阻:7.5 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:P-CHANNEL认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

2SJ399ZF-TL 数据手册

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2SJ399  
Absolute Maximum Ratings (Ta = 25°C)  
Item  
Symbol  
VDSS  
Ratings  
–30  
Unit  
V
Drain to source voltage  
Gate to source voltage  
Drain current  
VGSS  
±20  
V
ID  
–0.2  
A
1
Drain peak current  
ID(pulse)  
IDR  
*
–0.4  
A
Body to drain diode reverse drain current  
Channel dissipation  
Channel temperature  
Storage temperature  
–0.2  
A
Pch  
Tch  
Tstg  
150  
mW  
°C  
°C  
150  
–55 to +150  
Notes: 1. PW 100 µs, duty cycle 10%  
2. Marking is “ZF–”  
Electrical Characteristics (Ta = 25°C)  
Item  
Symbol Min  
Typ  
Max  
Unit  
Test conditions  
Drain to source breakdown  
voltage  
V(BR)DSS  
V(BR)GSS  
IGSS  
–30  
V
ID = –100 µA, VGS = 0  
Gate to source breakdown  
voltage  
±20  
V
IG = ±100 µA, VDS = 0  
Gate to source leak current  
2.7  
±2  
µA  
µA  
V
VGS = ±16 V, VDS = 0  
VDS = –30 V, VGS = 0  
ID = –10 µA, VDS = –5 V  
ID = –20 mA  
Zero gate voltage drain current IDSS  
–1  
Gate to source cutoff voltage  
VGS(off)  
–1.0  
–2.0  
5.0  
Static drain to source on state RDS(on)  
resistance  
V
GS = –4 V*1  
ID = –10 mA  
GS = –10 V*1  
2.0  
3.0  
V
Input capacitance  
Output capacitance  
Ciss  
1.1  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
VDS = –10 V  
VGS = 0  
Coss  
22.3  
0.17  
530  
Reverse transfer capacitance Crss  
f = 1 MHz  
ID = –0.1 A  
VGS = –10 V  
RL = 100 Ω  
PW = 5 µs  
Turn-on delay time  
Rise time  
td(on)  
tr  
td(off)  
tf  
2170  
7640  
7690  
Turn-off delay time  
Fall time  
2

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