Datasheet > 2SJ402(2-10S2B)

2SJ402(2-10S2B)

更新时间： 2024-02-20 22:50:49

品牌	Logo	应用领域
东芝 - TOSHIBA		开关脉冲晶体管
页数	文件大小	规格书
6页	456K
描述
TRANSISTOR 30 A, 60 V, 0.06 ohm, P-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power

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2SJ402(2-10S2B) 技术参数

是否无铅：	含铅	是否Rohs认证：	不符合
生命周期：	Lifetime Buy	包装说明：	SMALL OUTLINE, R-PSSO-G2
针数：	3	Reach Compliance Code：	unknown
ECCN代码：	EAR99	风险等级：	5.29
Is Samacsys：	N	雪崩能效等级（Eas）：	936 mJ
外壳连接：	DRAIN	配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	60 V	最大漏极电流 (ID)：	30 A
最大漏源导通电阻：	0.06 Ω	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：	R-PSSO-G2	元件数量：	1
端子数量：	2	工作模式：	ENHANCEMENT MODE
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	P-CHANNEL	最大脉冲漏极电流 (IDM)：	120 A
认证状态：	Not Qualified	表面贴装：	YES
端子形式：	GULL WING	端子位置：	SINGLE
处于峰值回流温度下的最长时间：	NOT SPECIFIED	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	Base Number Matches：	1

2SJ402(2-10S2B) 数据手册

2SJ402

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L −π−MOSV)

2SJ402

DC−DC Converter, Relay Drive and Motor Drive

Applications

Unit: mm

z 4-V gate drive

z Low drain−source ON resistance

z High forward transfer admittance

: R

= 29 mΩ (typ.)

DS (ON)

: |Y | = 23 S (typ.)

z Low leakage current : I

= −100 μA (max) (V

= −60 V)

DSS

z Enhancement mode : V = −0.8 to −2.0 V (V

= −10 V, I = −1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain−source voltage

Symbol

Rating

Unit

−60

±20

−30

−120

100

DSS

Drain−gate voltage (R

Gate−source voltage

= 20 kΩ)

DGR

GSS

DC (Note 1)

Pulse(Note 1)

Drain current

Drain power dissipation (Tc = 25°C)

Single pulse avalanche energy

JEDEC

JEITA

―

936

(Note 2)

Avalanche current

−30

TOSHIBA

2-10S1B

Repetitive avalenche energy (Note 3)

Channel temperature

°C

Weight: 1.5 g (typ.)

150

Storage temperature range

−55~150

stg

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature,

etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage,

etc.) are within the absolute maximum ratings. Please design the

appropriate reliability upon reviewing the Toshiba Semiconductor

Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and

estimated failure rate, etc).

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

Thermal resistance, channel to ambient

1.25

83.3

°C / W

th (ch−c)

th (ch−a)

JEDEC

JEITA

―

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: = −50 V, T = 25°C (initial), L = 747 μH, R = 25 Ω,

TOSHIBA

2-10S2B

= −30 A

Weight: 1.5 g (typ.)

Note 3: Repetitive rating: pulse width limited by maximum channel

temperature

This transistor is an electrostatic-sensitive device. Please handle with caution.

2009-09-29

12 3 4 5 6

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