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2SJ197-T1 PDF预览

2SJ197-T1

更新时间: 2024-02-02 19:15:09
品牌 Logo 应用领域
瑞萨 - RENESAS /
页数 文件大小 规格书
8页 522K
描述
TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,1.5A I(D),SC-62

2SJ197-T1 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:compliant风险等级:5.84
配置:Single最大漏极电流 (Abs) (ID):1.5 A
FET 技术:METAL-OXIDE SEMICONDUCTOR工作模式:ENHANCEMENT MODE
最高工作温度:150 °C极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):2 W子类别:Other Transistors
表面贴装:YESBase Number Matches:1

2SJ197-T1 数据手册

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