Datasheet > 2SJ201_07

2SJ201_07

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
东芝 - TOSHIBA		放大器功率放大器
页数	文件大小	规格书
5页	449K
描述
High-Power Amplifier Application

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数据手册

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2SJ201_07 数据手册

2SJ201

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type

2SJ201

High-Power Amplifier Application

Unit: mm

z High breakdown voltage

: V

= −200 V

DSS

z High forward transfer admittance

z Complementary to 2SK1530

: |Y | = 5.0 S (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain−source voltage

Symbol

Rating

Unit

−200

±20

DSS

JEDEC

JEITA

―

Gate−source voltage

GSS

Drain current

(Note 1)

−12

Drain power dissipation (Tc = 25°C)

Channel temperature

150

°C

TOSHIBA

2-21F1B

stg

150

Weight: 9.75 g (typ.)

Storage temperature range

−55~150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

2006-11-16

12 3 4 5

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