Datasheet > 2SD2444K_1

2SD2444K_1

更新时间： 2024-09-26 06:25:15

品牌	Logo	应用领域
罗姆 - ROHM		晶体晶体管
页数	文件大小	规格书
3页	64K
描述
Power Transistor (15V, 1A)

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中文翻译

获取价格

数据手册

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2SD2444K_1 数据手册

2SD2444K

Transistors

Power Transistor (15V, 1A)

2SD2444K

zFeatures

zExternal dimensions (Unit : mm)

1) Low saturation voltage, V_CE(sat)=0.3V (Max.)

at I_C/ I_B= 0.4A / 20mA.

2) I_C= 1A

SMT3

2.9

1.1

0.8

0.4

3) Complements the 2SB1590K.

( )

(

)

( )

zPackaging specification and h_FE

0.95 0.95

1.9

0.15

Type

2SD2444K

(1)Emitter

(2)Base

SMT3

Package

Each lead has same dimensions

(3)Collector

hFE

BS∗

Marking

Code

T146

3000

Basic ordering unit (pieces)

Denotes

hFE

∗

zAbsolute maximum ratings (Ta=25°C)

Parameter

Symbol

Limits

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

VCBO

VCEO

VEBO

0.2

A (DC)

Collector power dissipation

Junction temperature

Storage temperature

150

°C

Tstg

−55 to +150

°C

zElectrical characteristics (Ta=25°C)

Parameter

Symbol Min.

Typ.

−

Max.

−

Unit

Conditions

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

BV^CBO

BVCEO

BVEBO

=50µA

=1mA

−

=50µA

CB=12V

EB=5V

CBO

−

0.5

0.3

390

−

µA

Emitter cutoff current

EBO

−

Collector-emitter saturation voltage

DC current transfer ratio

CE(sat)

−

=400mA, I

=2V/50mA

CE=2V, I = −50mA, f=100MHz

CB=10V, I =0A, f=1MHz

=20mA

180

−

CE/IC

Transition frequency

200

MHz

Output capacitance

Cob

−

Rev.A

1/2

12 3

中文翻译

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