2SD2449

更新时间： 2024-09-26 07:31:43

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	97K
描述
isc Silicon NPN Darlington Power Transistor

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2SD2449 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Darlington Power Transistor

2SD2449

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V_(BR)CEO= 160V(Min)

·High DC Current Gain-

: h_FE= 3000( Min.) @(I_C= 8A, V_CE= 5V)

·Low Collector Saturation Voltage-

: V_CE(sat)= 3.0V(Max)@ (I_C= 8A, I_B= 8mA)

·Complement to Type 2SB1594

APPLICATIONS

·Designed for power amplifier applications.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

VALUE

160

UNIT

Collector Current-Continuous

Base Current-Continuous

I_B

Collector Power Dissipation

@T_C=25℃

P_C

150

-55~150

℃

Junction Temperature

Storage Temperature

T_J

T_stg

isc Website：www.iscsemi.cn

中文翻译

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与2SD2449相关器件

型号	品牌	获取价格	描述	数据表
2SD2449A	ETC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| NPN \| 160V V(BR)CEO \| 10A I(C) \| TO-264AA
2SD2449-A	TOSHIBA	获取价格	TRANSISTOR 10 A, 160 V, NPN, Si, POWER TRANSISTOR, 2-21F1A, 3 PIN, BIP General Purpose Pow
2SD2449B	ETC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| NPN \| 160V V(BR)CEO \| 10A I(C) \| TO-264AA
2SD2449C	ETC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| NPN \| 160V V(BR)CEO \| 10A I(C) \| TO-264AA
2SD2449-C	TOSHIBA	获取价格	暂无描述
2SD2450	ROHM	获取价格	1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE
2SD2450/P	ROHM	获取价格	Small Signal Bipolar Transistor, 2A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO
2SD2450/PQ	ROHM	获取价格	Small Signal Bipolar Transistor, 2A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO
2SD2450/PR	ROHM	获取价格	Small Signal Bipolar Transistor, 2A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO
2SD2450/Q	ROHM	获取价格	Small Signal Bipolar Transistor, 2A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO