生命周期: | Transferred | 包装说明: | IN-LINE, R-PSIP-T3 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.75 |
风险等级: | 5.62 | 最大集电极电流 (IC): | 1.5 A |
集电极-发射极最大电压: | 50 V | 配置: | DARLINGTON |
最小直流电流增益 (hFE): | 4000 | JESD-30 代码: | R-PSIP-T3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
极性/信道类型: | NPN | 最大功率耗散 (Abs): | 1 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 120 MHz |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SD2118 | ROHM |
获取价格 |
Low VCE(sat) Transistor(Strobe flash) | |
2SD2118 | SECOS |
获取价格 |
NPN Silicon General Purpose Transistor | |
2SD2118 | TRSYS |
获取价格 |
Plastic-Encapsulated Transistors | |
2SD2118 | KEXIN |
获取价格 |
Low VCE(sat) Transistor | |
2SD2118 | TYSEMI |
获取价格 |
Low VCE(sat). Excellent DC current gain characteristics. NPN silicon transistor. | |
2SD2118 | WINNERJOIN |
获取价格 |
TRANSISTOR (NPN) | |
2SD2118 | CJ |
获取价格 |
TO-252-2L | |
2SD2118 | FOSHAN |
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TO-252 | |
2SD2118/QR | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 10A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, | |
2SD2118/R | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 10A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, |