2SD1892

更新时间： 2024-01-23 07:51:12

品牌	Logo	应用领域
松下 - PANASONIC		晶体晶体管功率双极晶体管
页数	文件大小	规格书
3页	57K
描述
Silicon NPN triple diffusion planar type Darlington(For power amplification)

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

2SD1892 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Base Number Matches：	1

2SD1892 数据手册

Power Transistors

2SD1892

Silicon NPN triple diffusion planar type Darlington

For power amplification

Unit: mm

10.0±0.2

5.5±0.2

4.2±0.2

Complementary to 2SB1252

2.7±0.2

Features

Optimum for 35W HiFi output

■

φ3.1±0.1

●

High foward current transfer ratio h_FE: 5000 to 30000

●

Low collector to emitter saturation voltage V_CE(sat): <2.5V

●

Full-pack package which can be installed to the heat sink with

one screw

1.3±0.2

1.4±0.1

+0.2

–0.1

0.5

0.8±0.1

Absolute Maximum Ratings (T =25˚C)

■

2.54±0.25

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_CP

Ratings

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

120

5.08±0.5

1:Base

2:Collector

3:Emitter

100

TO–220 Full Pack Package(a)

I_C

Internal Connection

Collector power T_C=25°C

P_C

dissipation

Ta=25°C

Junction temperature

Storage temperature

T_j

150

˚C

T_stg

–55 to +150

Electrical Characteristics (T =25˚C)

■

Parameter

Symbol

I_CBO

Conditions

min

typ

max

100

Unit

µA

V_CB= 120V, I_E= 0

Collector cutoff current

I_CEO

I_EBO

V_CEO

h_FE1

V_CE= 100V, I_B= 0

V_EB= 5V, I_C= 0

Emitter cutoff current

Collector to emitter voltage

_C= 30mA, I_B= 0

100

2000

5000

V_CE= 5V, I_C= 1A

Forward current transfer ratio

h_FE2

V_CE= 5V, I_C= 4A

30000

2.5

Collector to emitter saturation voltage V_CE(sat)

Base to emitter saturation voltage V_BE(sat)

I_C= 4A, I_B= 4mA

3.0

Transition frequency

Turn-on time

Storage time

Fall time

f_T

t_on

t_stg

t_f

V_CE= 10V, I_C= 0.5A, f = 1MHz

2.5

3.5

1.0

MHz

µs

I_C= 4A, I_B1= 4mA, I_B2= –4mA,

V_CC= 50V

µs

^*h_FE2Rank classification

Rank

h_FE2

5000 to 15000 8000 to 30000

12 3

中文翻译

下载PDF

与2SD1892相关器件

型号	品牌	描述	获取价格	数据表
2SD1892P	PANASONIC	Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,	获取价格
2SD1892Q	PANASONIC	Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,	获取价格
2SD1893	PANASONIC	Silicon NPN triple diffusion planar type Darlington(For power amplification)	获取价格
2SD1893	ISC	Silicon NPN Power Transistors	获取价格
2SD1893	SAVANTIC	Silicon NPN Power Transistors	获取价格
2SD1893P	ETC	TRANSISTOR \| BJT \| DARLINGTON \| NPN \| 110V V(BR)CEO \| 6A I(C) \| TO-247VAR	获取价格