Power Transistors
2SD1705
Silicon NPN epitaxial planar type
Unit: mm
For power switching
5.0 0.ꢁ
15.0 0.ꢀ
11.0 0.ꢁ
(ꢀ.ꢁ)
Complementary to 2SB1154
φ ꢀ.ꢁ 0.1
I Features
•
•
•
•
Low collector to emitter saturation voltage VCE(sat)
Satisfactory linearity of forward current transfer ratio hFE
Large collector current IC
Full-pack package which can be installed to the heat sink with one
screw
ꢁ.0 0.ꢁ
1.1 0.1
ꢁ.0 0.1
0.6 0.ꢁ
I Absolute Maximum Ratings TC = 25°C
5.45 0.ꢀ
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Symbol
VCBO
VCEO
VEBO
ICP
Rating
Unit
V
10.9 0.5
ꢁ
1: Base
2: Collector
3: Emitter
130
1
ꢀ
80
V
EIAJ: SC-96
TOP-3F-A Package
7
V
20
A
IC
10
A
TC = 25°C
Ta = 25°C
PC
70
W
Collector power
dissipation
3
Junction temperature
Storage temperature
Tj
150
°C
°C
Tstg
−55 to +150
I Electrical Characteristics TC = 25°C
Parameter
Collector cutoff current
Emitter cutoff current
Symbol
ICBO
Conditions
Min
Typ
Max
10
Unit
µA
µA
V
VCB = 100 V, IE = 0
VEB = 5 V, IC = 0
IEBO
50
Collector to emitter voltage
Forward current transfer ratio
VCEO
hFE1
IC = 10 mA, IB = 0
80
45
90
30
VCE = 2 V, IC = 0.1 A
VCE = 2 V, IC = 3 A
VCE = 2 V, IC = 6 A
IC = 6 A, IB = 0.3 A
IC = 10 A, IB = 1 A
*
hFE2
260
hFE3
Collector to emitter saturation voltage VCE(sat)1
VCE(sat)2
0.5
1.5
1.5
2.5
V
V
Base to emitter saturation voltage
VBE(sat)1
IC = 6 A, IB = 0.3 A
IC = 10 A, IB = 1 A
V
VBE(sat)2
V
Transition frequency
Turn-on time
Storage time
Fall time
fT
ton
tstg
tf
VCE = 10 V, IC = 0.5 A, f = 1 MHz
IC = 6 A, IB1 = 0.6 A, IB2 = − 0.6 A,
VCC = 50 V
20
0.5
2.0
0.2
MHz
µs
µs
µs
Note) : Rank classification
*
Rank
Q
P
hFE2
90 to 180
130 to 260
1