Datasheet > 2SD1712

2SD1712

更新时间： 2022-09-18 10:37:44

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
3页	89K
描述
Silicon NPN Power Transistors

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2SD1712 数据手册

Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

2SD1712

DESCRIPTION

·With TO-3PFa package

·Complement to type 2SB1157

·High transition frequency f_T

·Satisfactory linearity of h_FE

·Wide area of safe operation

APPLICATIONS

·For high power amplifier applications

PINNING

DESCRIPTION

Base

Collector

Emitter

Absolute maximum ratings(Ta=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

Open emitter

VALUE

UNIT

100

Open base

100

Open collector

I_CP

Collector current-peak

T_C=25℃

T_a=25℃

P_C

Collector power dissipation

T_j

Junction temperature

Storage temperature

150

℃

T_stg

-55~150

12 3

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