Datasheet > 2SD1538Q

2SD1538Q

更新时间： 2024-11-25 23:20:27

品牌	Logo	应用领域
其他 - ETC		晶体晶体管开关
页数	文件大小	规格书
4页	57K
描述
TRANSISTOR \| BJT \| NPN \| 20V V(BR)CEO \| 4A I(C) \| TO-221VAR

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SD1538Q 数据手册

Power Transistors

2SD1538, 2SD1538A

Silicon NPN epitaxial planar type

Unit: mm

3.4±0.3

8.5±0.2

6.0±0.5

For low-voltage switching

1.0±0.1

Complementary to 2SB1070 and 2SB1070A

Features

■

●

Low collector to emitter saturation voltage V_CE(sat)

1.5max.

1.1max.

0.5max.

●

High-speed switching

●

N type package enabling direct soldering of the radiating fin to

0.8±0.1

the printed circuit board, etc. of small electronic equipment.

2.54±0.3

5.08±0.5

Absolute Maximum Ratings (T =25˚C)

1:Base

2:Collector

3:Emitter

■

Parameter

Symbol

Ratings

Unit

N Type Package

Collector to

2SD1538

2SD1538A

2SD1538

V_CBO

Unit: mm

3.4±0.3

base voltage

Collector to

8.5±0.2

6.0±0.3

1.0±0.1

V_CEO

emitter voltage 2SD1538A

Emitter to base voltage

Peak collector current

Collector current

V_EBO

I_CP

I_C

R0.5

0.8±0.1

Collector power T_C=25°C

0 to 0.4

2.54±0.3

1.1 max.

P_C

5.08±0.5

dissipation

Ta=25°C

1.3

Junction temperature

Storage temperature

T_j

150

˚C

1:Base

2:Collector

3:Emitter

T_stg

–55 to +150

N Type Package (DS)

Electrical Characteristics (T =25˚C)

■

Parameter

Collector cutoff

Symbol

I_CBO

Conditions

min

typ

max

Unit

µA

2SD1538

V_CB= 40V, I_E= 0

current

2SD1538A

V_CB= 50V, I_E= 0

V_EB= 5V, I_C= 0

Emitter cutoff current

I_EBO

V_CEO

h_FE1

Collector to emitter 2SD1538

voltage 2SD1538A

I_C= 10mA, I_B= 0

V_CE= 2V, I_C= 0.1A

V_CE= 2V, I_C= 1A

Forward current transfer ratio

h_FE2

260

0.5

1.5

Collector to emitter saturation voltage V_CE(sat)

Base to emitter saturation voltage V_BE(sat)

I_C= 2A, I_B= 0.1A

Transition frequency

Turn-on time

Storage time

Fall time

f_T

t_on

t_stg

t_f

V_CE= 5V, I_C= 0.5A, f = 10MHz

120

0.2

0.5

0.1

MHz

µs

I_C= 2A, I_B1= 0.2A, I_B2= – 0.2A,

V_CC= 20V

µs

^*h_FE2Rank classification

Rank

h_FE2

90 to 180

130 to 260

12 3 4

中文翻译

下载PDF

与2SD1538Q相关器件

型号	品牌	获取价格	描述	数据表
2SD1538Q(DS)	PANASONIC	获取价格	Transistor
2SD1538R	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 20V V(BR)CEO \| 4A I(C) \| TO-221VAR
2SD1538TX	PANASONIC	获取价格	Power Bipolar Transistor, 4A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2
2SD1539	PANASONIC	获取价格	Silicon NPN epitaxial planar type(For low-voltage switching)
2SD1539A	PANASONIC	获取价格	Silicon NPN epitaxial planar type(For low-voltage switching)
2SD1539AP	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 40V V(BR)CEO \| 4A I(C) \| SOT-186
2SD1539AQ	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 40V V(BR)CEO \| 4A I(C) \| SOT-186
2SD1539AR	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 40V V(BR)CEO \| 4A I(C) \| SOT-186
2SD1539P	PANASONIC	获取价格	Power Bipolar Transistor, 4A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3
2SD1539Q	PANASONIC	获取价格	Power Bipolar Transistor, 4A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3