2SD1539A

更新时间： 2024-11-25 22:34:39

品牌	Logo	应用领域
松下 - PANASONIC		开关
页数	文件大小	规格书
3页	56K
描述
Silicon NPN epitaxial planar type(For low-voltage switching)

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中文翻译

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数据手册

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2SD1539A 数据手册

Power Transistors

2SD1539, 2SD1539A

Silicon NPN epitaxial planar type

For low-voltage switching

Unit: mm

Complementary to 2SB1071 and 2SB1071A

10.0±0.2

5.5±0.2

4.2±0.2

2.7±0.2

Features

■

●

Low collector to emitter saturation voltage V_CE(sat)

●

High-speed switching

φ3.1±0.1

●

Full-pack package which can be installed to the heat sink with

one screw

Absolute Maximum Ratings (T =25˚C)

■

1.3±0.2

1.4±0.1

Parameter

Symbol

Ratings

Unit

+0.2

–0.1

0.5

Collector to

2SD1539

2SD1539A

2SD1539

0.8±0.1

V_CBO

base voltage

Collector to

2.54±0.25

V_CEO

emitter voltage 2SD1539A

Emitter to base voltage

Peak collector current

Collector current

5.08±0.5

V_EBO

I_CP

1:Base

2:Collector

3:Emitter

I_C

TO–220 Full Pack Package(a)

Collector power T_C=25°C

P_C

dissipation

Ta=25°C

Junction temperature

Storage temperature

T_j

150

˚C

T_stg

–55 to +150

Electrical Characteristics (T =25˚C)

■

Parameter

Collector cutoff

Symbol

I_CBO

Conditions

min

typ

max

Unit

µA

2SD1539

V_CB= 40V, I_E= 0

current

2SD1539A

V_CB= 50V, I_E= 0

V_EB= 5V, I_C= 0

Emitter cutoff current

I_EBO

V_CEO

h_FE1

Collector to emitter 2SD1539

voltage 2SD1539A

I_C= 10mA, I_B= 0

V_CE= 2V, I_C= 0.1A

V_CE= 2V, I_C= 1A

Forward current transfer ratio

h_FE2

260

0.5

1.5

Collector to emitter saturation voltage V_CE(sat)

Base to emitter saturation voltage V_BE(sat)

I_C= 2A, I_B= 0.1A

Transition frequency

Turn-on time

Storage time

Fall time

f_T

t_on

t_stg

t_f

V_CE= 5V, I_C= 0.5A, f = 10MHz

120

0.2

0.5

0.1

MHz

µs

I_C= 2A, I_B1= 0.2A, I_B2= – 0.2A,

V_CC= 20V

µs

^*h_FE2Rank classification

Rank

h_FE2

90 to 180

130 to 260

12 3

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