Power Transistors
2SD1257, 2SD1257A
Silicon NPN epitaxial planar type
Unit: mm
For power switching
3.4±0.3
8.5±0.2
6.0±0.5
1.0±0.1
Complementary to 2SB0934 (2SB934)
Features
■
●
Low collector to emitter saturation voltage VCE(sat)
1.5max.
1.1max.
0.5max.
●
Satisfactory linearity of foward current transfer ratio hFE
Large collector current IC
N type package enabling direct soldering of the radiating fin to
●
0.8±0.1
●
the printed circuit board, etc. of small electronic equipment.
2.54±0.3
5.08±0.5
1:Base
2:Collector
3:Emitter
Absolute Maximum Ratings (T =25˚C)
1
2
3
■
C
Parameter
Symbol
Ratings
Unit
N Type Package
Collector to
2SD1257
2SD1257A
2SD1257
130
Unit: mm
VCBO
V
8.5±0.2
6.0±0.3
3.4±0.3
base voltage
Collector to
150
1.0±0.1
80
VCEO
V
emitter voltage 2SD1257A
Emitter to base voltage
Peak collector current
Collector current
100
VEBO
ICP
7
V
A
A
15
R0.5
R0.5
IC
7
40
0.8±0.1
0 to 0.4
2.54±0.3
1.1 max.
Collector power TC=25°C
5.08±0.5
PC
W
dissipation
Ta=25°C
1.3
1:Base
2:Collector
3:Emitter
Junction temperature
Storage temperature
Tj
150
˚C
˚C
1
2
3
Tstg
–55 to +150
N Type Package (DS)
Electrical Characteristics (T =25˚C)
■
C
Parameter
Symbol
ICBO
Conditions
min
typ
max
10
Unit
µA
Collector cutoff current
Emitter cutoff current
VCB = 100V, IE = 0
IEBO
VCEO
hFE1
VEB = 5V, IC = 0
50
µA
Collector to emitter 2SD1257
80
100
45
IC = 10mA, IB = 0
V
voltage
2SD1257A
VCE = 2V, IC = 0.1A
Forward current transfer ratio
*
hFE2
VCE = 2V, IC = 3A
60
260
0.5
1.5
Collector to emitter saturation voltage VCE(sat)
Base to emitter saturation voltage VBE(sat)
IC = 5A, IB = 0.25A
V
V
IC = 5A, IB = 0.25A
Transition frequency
Turn-on time
Storage time
Fall time
fT
ton
tstg
tf
VCE = 10V, IC = 0.5A, f = 10MHz
30
0.5
1.5
0.1
MHz
µs
IC = 3A, IB1 = 0.3A, IB2 = – 0.3A,
VCC = 50V
µs
µs
*hFE2 Rank classification
Rank
hFE2
R
Q
P
60 to 120
90 to 180
130 to 260
Note) The part numbers in the parenthesis show conventional part number.
1