Datasheet > 2SD1257-Q

2SD1257-Q

更新时间： 2022-12-29 20:48:46

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页数	文件大小	规格书
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描述
NPN Transistors

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数据手册

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2SD1257-Q 数据手册

SMD Type

Transistors

NPN Transistors

2SD1257

TO-252

Unit: mm

+0.15

-0.15

6.50

+0.1

■ Features

2.30

-0.1

+0.8

-0.7

+0.2

5.30

-0.2

0.50

● Satisfactory linearity of foward current transfer ratio h^FE

● Low collector to emitter saturation voltage VCE(sat)

● Large collector current I

0.127

max

+0.1

-0.1

0.80

● Complementary to 2SB934

0.1

0.60⁺_-

1 Base

2.3

4.60

+0.15

-0.15

2 Collector

3 Emitter

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Symbol

Rating

Unit

VCBO

VCEO

VEBO

130

Collector Current - Continuous

Collector Current - Pulse

1.3

150

Collector Power Dissipation

Tc = 25℃

Ta = 25℃

℃

Junction Temperature

Storage Temperature Range

stg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

130

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

Ic= 100 μA， I

Ic= 10 mA， I

= 100μA， I

CB= 100 V , I

EB= 5V , I =0

= 0

CBO

EBO

Collector-emitter saturation voltage

Base - emitter saturation voltage

CE(sat)

BE(sat)

=5 A, I

=250mA

0.5

1.5

=5 A, I

FE(1)

FE(2)

CE= 2V, I

= 100mA

= 3 A

DC current gain

260

Turn-on time

Storage time

Fall time

0.5

1.5

0.1

= 3A, I^B1= 300mA, I^B2= –

stg

300mA, CC = 50V

Transition frequency

CE= 10V, I

C= 500mA,f=10MHz

MHz

■ Classification of hfe(2)

Type

2SD1257-R

60-120

2SD1257-Q

90-180

2SD1257-P

130-260

Range

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