Datasheet > 2SC945Y

2SC945Y

更新时间： 2024-01-24 17:17:17

品牌	Logo	应用领域
商朗 - LUNSURE		/
页数	文件大小	规格书
1页	33K
描述
Transistor

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中文翻译

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数据手册

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2SC945Y 数据手册

Shanghai Lunsure Electronic

Technology Co.,Ltd

Tel:0086-21-37185008

Fax:0086-21-57152769

2SC945

Features

Capable of 0.4Watts of Power Dissipation.

NPN Silicon

Plastic-Encapsulate

Transistor

Collector-current 0.15A

Collector-base Voltage 60V

Operating and storage junction temperature range: -55^OC to +150^OC

Pin Configuration

Bottom View

TO-92

Electrical Characteristics @ 25^OC Unless Otherwise Specified

Symbol

Parameter

Min

Max

Units

OFF CHARACTERISTICS

V _(BR)CEO

V _(BR)CBO

V _(BR)EBO

I_CBO

Collector-Emitter Breakdown Voltage

(I _C=0.1mAdc, I_B=0)

Collector-Base Breakdown Voltage

(I _C=1000uAdc, I_E=0)

Emitter-Base Breakdown Voltage

(I _E=100uAdc, I_C=0)

Vdc

5.0

Vdc

Collector Cutoff Current

0.1

uAdc

(V _CB=60Vdc, I =0Adc)

Collector Cutoff Current

(V _CE=55Vdc,R=10M OHM)

Emitter Cutoff Current

CER

I_EBO

(V _EB=5.0Vdc, I =0Adc)

ON CHARACTERISTICS

h _FE(1)

h _FE(2)

V _CE(sat)

V _BE(sat)

V_BE

DC Current Gain

(I =1.0mAdc, V_CE=6.0Vdc)

DC Current Gain

700

(I _C=0.1mAdc, V_CE=6.0Vdc)

Collector-Emitter Saturation Voltage

(I _C=100mAdc, I_B=10mAdc)

Base-Emitter Saturation Voltage

(I _C=100mAdc, I_B=10mAdc)

0.3

1.0

1.4

Vdc

Base-Emitter Voltage

(I _E=310mAdc)

DIMENSIONS

INCHES

MIN

.170

.550

.010

.130

.010

MIN

SMALL-SIGNAL CHARACTERISTICS

DIM

MAX

4.83

14.97

0.56

3.96

2.64

NOTE

f _T

Transistor Frequency

.190

.590

.020

.160

.104

4.33

4.30

13.97

0.36

3.30

2.44

(I =10mAdc, V_CE=6.0Vdc, f=30MHz)

150

MHz

CLASSIFICATION OF HFE (1)

Rank

200-400

350-700

Range

70-140

120-240

www.cnelectr.com

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