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2SC5084TE85L

更新时间： 2024-02-01 07:38:15
品牌 Logo 应用领域
东芝 - TOSHIBA 放大器光电二极管晶体管
页数 文件大小 规格书
7页 454K
描述
TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal

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2SC5084TE85L 技术参数

生命周期：Obsolete包装说明：SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.21.00.75风险等级：5.72
其他特性：LOW NOISE最大集电极电流 (IC)：0.08 A
基于收集器的最大容量：1.15 pF集电极-发射极最大电压：12 V
配置：SINGLE最小直流电流增益 (hFE)：80
最高频带：ULTRA HIGH FREQUENCY BANDJESD-30 代码：R-PDSO-G3
元件数量：1端子数量：3
最高工作温度：125 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
极性/信道类型：NPN认证状态：Not Qualified
表面贴装：YES端子形式：GULL WING
端子位置：DUAL晶体管应用：AMPLIFIER
晶体管元件材料：SILICON标称过渡频率 (fT)：7000 MHz
Base Number Matches：1

2SC5084TE85L 数据手册

 浏览型号2SC5084TE85L的Datasheet PDF文件第2页浏览型号2SC5084TE85L的Datasheet PDF文件第3页浏览型号2SC5084TE85L的Datasheet PDF文件第4页浏览型号2SC5084TE85L的Datasheet PDF文件第5页浏览型号2SC5084TE85L的Datasheet PDF文件第6页浏览型号2SC5084TE85L的Datasheet PDF文件第7页 
2SC5084  
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type  
2SC5084  
VHF~UHF Band Low Noise Amplifier Applications  
Unit: mm  
•
•
Low noise figure, high gain.  
NF = 1.1dB, |S |2 = 11dB (f = 1 GHz)  
21e  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
20  
12  
V
V
Collector-emitter voltage  
Emitter-base voltage  
Base current  
3
V
I
40  
mA  
mA  
mW  
°C  
°C  
B
Collector current  
I
80  
C
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
150  
125  
−55~125  
C
T
j
T
stg  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
JEDEC  
JEITA  
―
SC-59  
2-3F1A  
TOSHIBA  
Please design the appropriate reliability upon reviewing the  
Toshiba Semiconductor Reliability Handbook (“Handling  
Precautions”/“Derating Concept and Methods”) and individual  
reliability data (i.e. reliability test report and estimated failure rate, etc).  
Weight: 0.012 g (typ.)  
Microwave Characteristics (Ta = 25°C)  
Characteristics  
Transition frequency  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
f
V
V
V
V
V
= 10 V, I = 20 mA  
5
7
16.5  
11  
⎯
⎯
⎯
⎯
2
GHz  
T
CE  
CE  
CE  
CE  
CE  
C
⎪S ⎪2 (1)  
= 10 V, I = 20 mA, f = 500 MHz  
⎯
7.5  
⎯
⎯
21e  
C
Insertion gain  
Noise figure  
dB  
dB  
⎪S ⎪2 (2)  
= 10 V, I = 20 mA, f = 1 GHz  
21e  
C
NF (1)  
NF (2)  
= 10 V, I = 5 mA, f = 500 MHz  
1
C
= 10 V, I = 5 mA, f = 1 GHz  
1.1  
C
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Collector cut-off current  
Emitter cut-off current  
Symbol  
Test Condition  
Min  
⎯
Typ.  
⎯
Max  
1
Unit  
μA  
I
V
V
= 10 V, I = 0  
E
CBO  
CB  
EB  
I
= 1 V, I = 0  
⎯
⎯
1
μA  
EBO  
C
h
FE  
DC current gain  
V
V
= 10 V, I = 20 mA  
80  
⎯
240  
CE  
CB  
C
(Note 1)  
Output capacitance  
C
⎯
⎯
1.0  
⎯
pF  
pF  
ob  
= 10 V, I = 0, f = 1 MHz (Note 2)  
E
Reverse transfer capacitance  
C
0.65  
1.15  
re  
Note 1:  
Note 2:  
h
classification O: 80~160, Y: 120~240  
FE  
C
is measured by 3 terminal method with capacitance bridge.  
re  
1
2007-11-01  
1234567

中文翻译

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