Datasheet > 2SC4853A-4-TL-E

2SC4853A-4-TL-E

更新时间： 2024-01-31 21:29:05

品牌	Logo	应用领域
安森美 - ONSEMI		射频晶体管
页数	文件大小	规格书
8页	353K
描述
射频晶体管，NPN 单 MCP，6 V，15 mA，fT = 5 GHz

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2SC4853A-4-TL-E 数据手册

Ordering number : ENA1076A

2SC4853A

RF Transistor

6V, 15mA, f =5GHz, NPN Single MCP

http://onsemi.com

Features

•

Low-voltage, low-current operation : f =5GHz typ

(V =1V, I =1mA) : S21e ²=7dB typ (f=1GHz)

⏐

: NF=2.6dB typ (f=1GHz)

Speciﬁcations

at Ta=25°C

Absolute Maximum Ratings

Parameter

Collector-to-Base Voltage

Collector-to-Emitter Voltage

Emitter-to-Base Voltage

Collector Current

Symbol

Conditions

Ratings

Unit

CBO

CEO

1.5

EBO

Collector Dissipation

Junction Temperature

Storage Temperature

150

Tstg

--55 to +150

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating

Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

Product & Package Information

Package Dimensions

unit : mm (typ)

• Package

: MCP

7023A-009

• JEITA, JEDEC

: SC-70, SOT-323

•

Minimum Packing Quantity : 3,000 pcs./reel

2SC4853A-4-TL-E

2.0

0.15

Packing Type: TL

Marking

0 to 0.08

LOT No.

0.65

0.3

Electrical Connection

1 : Base

2 : Emitter

3 : Collector

MCP

Semiconductor Components Industries, LLC, 2013

August, 2013

80812 TKIM/D2408AB MSIM TC-00001797 No. A1076-1/8

12 3 4 5 6 7 8

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