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2SC4643DRTL PDF预览

2SC4643DRTL

更新时间: 2024-02-01 09:35:27
品牌 Logo 应用领域
日立 - HITACHI 晶体小信号双极晶体管射频小信号双极晶体管放大器
页数 文件大小 规格书
5页 27K
描述
RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, UPAK-3

2SC4643DRTL 技术参数

生命周期:Transferred包装说明:SMALL OUTLINE, R-PSSO-F3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.31外壳连接:COLLECTOR
最大集电极电流 (IC):0.05 A基于收集器的最大容量:1.7 pF
集电极-发射极最大电压:9 V配置:SINGLE
最高频带:ULTRA HIGH FREQUENCY BANDJESD-30 代码:R-PSSO-F3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子形式:FLAT端子位置:SINGLE
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):8000 MHzBase Number Matches:1

2SC4643DRTL 数据手册

 浏览型号2SC4643DRTL的Datasheet PDF文件第1页浏览型号2SC4643DRTL的Datasheet PDF文件第3页浏览型号2SC4643DRTL的Datasheet PDF文件第4页浏览型号2SC4643DRTL的Datasheet PDF文件第5页 
2SC4643  
Absolute Maximum Ratings (Ta = 25°C)  
Item  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Ratings  
Unit  
V
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Collector current  
15  
9
V
1.5  
V
50  
mA  
mW  
°C  
°C  
Collector power dissipation  
Junction temperature  
Storage temperature  
PC  
400  
Tj  
150  
Tstg  
–55 to +150  
Electrical Characteristics (Ta = 25°C)  
Item  
Symbol Min  
Typ  
Max  
Unit  
Test conditions  
Collector to base breakdown  
voltage  
V(BR)CBO  
15  
V
IC = 10 µA, IE = 0  
Collector cutoff current  
ICBO  
ICEO  
IEBO  
hFE  
40  
1
µA  
mA  
µA  
VCB = 12 V, IE = 0  
VCE = 9 V, RBE = ∞  
VEB = 1.5 V, IC = 0  
VCE = 5 V, IC = 20 mA  
1
Emitter cutoff current  
10  
250  
1.7  
DC current transfer ratio  
Collector output capacitance  
120  
1.0  
Cob  
pF  
VCB = 5 V, IE = 0,  
f = 1MHz  
Gain bandwidth product  
Power gain  
fT  
5.5  
7.5  
8.0  
GHz  
dB  
VCE = 5 V, IC = 20 mA  
PG  
10.5  
VCE = 5 V, IC = 20 mA,  
f = 900 MHz  
Noise figure  
NF  
1.2  
2.5  
dB  
VCE = 5 V, IC = 5 mA,  
f = 900 MHz  
Note: Marking is “DR”.  
See characteristic curve of 2SC4592  
2

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