Datasheet > 2SC4536-T1QS

2SC4536-T1QS

更新时间： 2024-02-04 11:49:59

品牌	Logo	应用领域
日电电子 - NEC		放大器晶体管
页数	文件大小	规格书
7页	47K
描述
RF Small Signal Bipolar Transistor, 0.25A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, PLASTIC, POWER, MINIMOLD PACKAGE-3

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2SC4536-T1QS 技术参数

是否Rohs认证：	不符合	生命周期：	Transferred
包装说明：	SMALL OUTLINE, R-PSSO-F3	针数：	3
Reach Compliance Code：	compliant	ECCN代码：	EAR99
风险等级：	5.45	其他特性：	LOW NOISE
外壳连接：	COLLECTOR	最大集电极电流 (IC)：	0.25 A
集电极-发射极最大电压：	15 V	配置：	SINGLE
最高频带：	ULTRA HIGH FREQUENCY BAND	JESD-30 代码：	R-PSSO-F3
JESD-609代码：	e0	元件数量：	1
端子数量：	3	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性/信道类型：	NPN
认证状态：	Not Qualified	表面贴装：	YES
端子面层：	TIN LEAD	端子形式：	FLAT
端子位置：	SINGLE	处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	AMPLIFIER	晶体管元件材料：	SILICON

2SC4536-T1QS 数据手册

DATA SHEET

NPN SILICON RF TRANSISTOR

2SC4536

NPN EPITAXIAL SILICON RF TRANSISTOR FOR

HIGH-FREQUENCY LOW-NOISE AMPLIFICATION

3-PIN POWER MINIMOLD

DESCRIPTION

The 2SC4536 is designed for use in middle power, low distortion low noise figure RF amplifier. It features

excellent linearity and large dynamic range, which make it suitable for CATV, telecommunication, and other use, it

employs plastic surface mount type package (SOT-89).

FEATURES

•

Low distortion: IM²= 59.0 dBc TYP., IM³= 82.0 dBc TYP. @ V^CE= 10 V, I^C= 50 mA

Low noise: NF = 2.0 dB TYP. @ V^CE= 10 V, I^C= 50 mA, f = 1 GHz

Large P^tot: P^tot= 2.0 W (Mounted on double-sided copper-clad 16 cm²× 0.7 mm (t) ceramic substrate)

Small package : 3-pin power minimold package

ORDERING INFORMATION

Part Number

Quantity

Supplying Form

2SC4536

25 pcs (Non reel)

1 kpcs/reel

• 12 mm wide embossed taping

• Collector face the perforation side of the tape

2SC4536-T1

Remark To order evaluation samples, contact your nearby sales office.

The unit sample quantity is 25 pcs.

ABSOLUTE MAXIMUM RATINGS (T^A= +25°C)

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Symbol

V^CBO

V^CEO

V^EBO

I^C

Ratings

Unit

3.0

250

tot ^Note

2.0

Total Power Dissipation

Junction Temperature

Storage Temperature

T^j

150

°C

T^stg

−65 to +150

Note Mounted on double-sided copper-clad 16 cm²× 0.7 mm (t) ceramic substrate

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

The information in this document is subject to change without notice. Before using this document, please confirm that

this is the latest version.

Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices

representative for availability and additional information.

Document No. PU10338EJ01V0DS (1st edition)

(Previous No. P10369EJ2V1DS00)

The mark • shows major revised points.

Date Published May 2003 CP(K)

Printed in Japan

NEC Compound Semiconductor Devices 1994, 2003

12 3 4 5 6 7

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与2SC4536-T1QS相关器件

型号	品牌	描述	获取价格	数据表
2SC4536-T1QS-A	NEC	RF Small Signal Bipolar Transistor, 0.25A I(C), 1-Element, Ultra High Frequency Band, Sili	获取价格
2SC4537	HITACHI	Silicon NPN Epitaxial	获取价格
2SC4537	ISC	isc Silicon NPN RF Transistor	获取价格
2SC4537	RENESAS	Silicon NPN Epitaxial	获取价格
2SC4537IS	HITACHI	RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Silicon, NPN	获取价格
2SC4537IS-TL	HITACHI	RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Sili	获取价格

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