2SC4538R

更新时间： 2024-01-21 12:52:53

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	229K
描述
Silicon NPN Power Transistor

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2SC4538R 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

2SC4538R

DESCRIPTION

·High Collector-Emitter Breakdown Voltage-

: V_(BR)CEO= 800V(Min.)

·High Switching Speed

·High Reliability

APPLICATIONS

·Switching regulators

·Ultrasonic generators

·High frequency inverters

·General purpose power amplifiers

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base voltage

VALUE

900

800

UNIT

Collector Current-Continuous

Base Current-Continuous

I_B

Collector Power Dissipation

@ T_C=25℃

P_C

℃

T_J

Junction Temperature

150

-55~150

Storage Temperature Range

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

1.5

UNIT

Thermal Resistance,Junction to Case

℃/W

R_{th j-c}

isc Website：www.iscsemi.cn

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