生命周期: | Active | 包装说明: | FLANGE MOUNT, R-XSFM-T3 |
Reach Compliance Code: | unknown | 风险等级: | 5.65 |
最大集电极电流 (IC): | 6 A | 集电极-发射极最大电压: | 80 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 50 |
JESD-30 代码: | R-XSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | UNSPECIFIED | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | NPN |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 20 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SC4466L-P-T3P-T | UTC |
获取价格 |
Power Bipolar Transistor | |
2SC4466L-X-T3P-T | UTC |
获取价格 |
SILICON NPN TRIPLE DIFFUSED PLANAR TRANSISTOR | |
2SC4466L-Y-T3P-T | UTC |
获取价格 |
Power Bipolar Transistor | |
2SC4466O | SANKEN |
获取价格 |
Power Bipolar Transistor, 6A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 | |
2SC4466O | ALLEGRO |
获取价格 |
Power Bipolar Transistor, 6A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 | |
2SC4466O | ISC |
获取价格 |
暂无描述 | |
2SC4466P | ISC |
获取价格 |
Transistor | |
2SC4466P | SANKEN |
获取价格 |
暂无描述 | |
2SC4467 | JMNIC |
获取价格 |
Silicon NPN Power Transistors | |
2SC4467 | ISC |
获取价格 |
Silicon NPN Power Transistors |