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2SC4116-GR(T5LHITF PDF预览

2SC4116-GR(T5LHITF

更新时间： 2024-09-23 15:32:07
品牌 Logo 应用领域
东芝 - TOSHIBA 放大器光电二极管晶体管
页数 文件大小 规格书
4页 382K
描述
Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

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2SC4116-GR(T5LHITF 技术参数

生命周期：Obsolete包装说明：SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code：unknown风险等级：5.64
其他特性：LOW NOISE最大集电极电流 (IC)：0.15 A
集电极-发射极最大电压：50 V配置：SINGLE
最小直流电流增益 (hFE)：200JESD-30 代码：R-PDSO-G3
元件数量：1端子数量：3
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE极性/信道类型：NPN
参考标准：AEC-Q101表面贴装：YES
端子形式：GULL WING端子位置：DUAL
晶体管应用：AMPLIFIER晶体管元件材料：SILICON
标称过渡频率 (fT)：80 MHzBase Number Matches：1

2SC4116-GR(T5LHITF 数据手册

 浏览型号2SC4116-GR(T5LHITF的Datasheet PDF文件第2页浏览型号2SC4116-GR(T5LHITF的Datasheet PDF文件第3页浏览型号2SC4116-GR(T5LHITF的Datasheet PDF文件第4页 
2SC4116  
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)  
2SC4116  
Audio Frequency General Purpose Amplifier Applications  
Unit: mm  
•
•
•
•
•
•
•
AEC-Q101 Qualified (Note1)  
High voltage and high current: V  
= 50 V, I = 150 mA (max)  
C
CEO  
Excellent h  
FE  
linearity: h  
(I = 0.1 mA)/h  
(I = 2 mA) = 0.95 (typ.)  
FE C  
FE  
C
High h : h  
FE FE  
= 70 to 700  
Low noise: NF = 1dB (typ.), 10dB (max)  
Complementary to 2SA1586  
Small package  
Note1: For detail information, please contact to our sales.  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
60  
50  
V
V
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
5
V
I
150  
mA  
mA  
mW  
°C  
°C  
C
Base current  
I
30  
B
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
100  
C
JEDEC  
JEITA  
―
T
125  
j
SC-70  
2-2E1A  
T
−55 to 125  
stg  
TOSHIBA  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
Weight: 0.006 g (typ.)  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are  
within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Symbol  
Test Condition  
= 60 V, I = 0  
Min  
Typ.  
Max  
Unit  
Collector cut-off current  
Emitter cut-off current  
DC current gain  
I
V
V
V
―
―
70  
―
80  
―
―
―
0.1  
0.1  
700  
0.25  
―
μA  
μA  
CBO  
CB  
EB  
CE  
E
I
= 5 V, I = 0  
C
EBO  
(Note)  
h
= 6 V, I = 2 mA  
―
FE  
CE (sat)  
C
Collector-emitter saturation voltage  
Transition frequency  
V
I
= 100 mA, I = 10 mA  
0.1  
―
V
C
B
f
V
V
V
= 10 V, I = 1 mA  
MHz  
pF  
T
CE  
CB  
CE  
C
Collector output capacitance  
C
ob  
= 10 V, I = 0, f = 1 MHz  
2.0  
3.5  
E
= 6 V, I = 0.1 mA, f = 1 kHz,  
C
Noise figure  
NF  
―
1.0  
10  
dB  
R
= 10 kΩ,  
g
Note: h classification O (O): 70 to 140, Y (Y): 120 to 240, GR (G): 200 to 400, BL (L): 350 to 700  
FE  
(
) marking symbol  
Marking  
Start of commercial production  
1987-01  
1
2015-01-09  
1234

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