Datasheet > 2SC4102

2SC4102

更新时间： 2024-10-01 07:30:51

品牌	Logo	应用领域
金誉半导体 - HTSEMI		晶体晶体管光电二极管
页数	文件大小	规格书
1页	466K
描述
TRANSISTOR (NPN)

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中文翻译

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数据手册

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2SC4102 数据手册

2SC4102

TRANSISTOR (NPN)

FEATURES

SOT–323

 High Breakdown Voltage

 Complements the 2SA1579

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

Unit

Collector-Base Voltage

120

1. BASE

Collector-Emitter Voltage

Emitter-Base Voltage

120

2. EMITTER

3. COLLECTOR

Collector Current

℃/W

℃

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

200

P_C

R_ΘJA

T_j

625

150

Storage Temperature

T_stg

-55～+150

℃

ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

120

Typ

Max

Unit

V_(BR)CBOI_C=50µA, I_E=0

V_(BR)CEOI_C=1mA, I_B=0

V_(BR)EBOI_E=50µA, I_C=0

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_CBO

I_EBO

h_FE

V_CB=100V, I_E=0

V_EB=4V, I_C=0

500

560

0.5

Emitter cut-off current

V_CE=6V, I_C=2mA

180

DC current gain

V_CE(sat)

f_T

I_C=10mA, I_B=1mA

Collector-emitter saturation voltage

Transition frequency

V_CE=12V,I_c=2mA ,f=100MHz

V_CB=12V, I_E=0, f=1MHz

140

2.5

MHz

C_ob

Collector output capacitance

CLASSIFICATION OF h_FE

RANK

180–390

RANGE

270–560

MARKING

JinYu

semiconductor

www.htsemi.com

中文翻译

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