Datasheet > 2SC4102_11

2SC4102_11

更新时间： 2024-01-16 13:11:57

品牌	Logo	应用领域
罗姆 - ROHM		晶体放大器晶体管
页数	文件大小	规格书
3页	126K
描述
High-voltage Amplifier Transistor

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数据手册

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2SC4102_11 数据手册

High-voltage Amplifier Transistor (120V, 50mA)

2SC4102 / 2SC3906K

Features

Dimensions (Unit : mm)

1) High breakdown voltage. (BV^CEO= 120V)

2) Complements the 2SA1579 / 2SA1514K

2SC4102

1.25

2.1

Absolute maximum ratings (Ta=25C)

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Symbol

Limits

Unit

VCBO

VCEO

VEBO

120

0.1Min.

Each lead has same dimensions

ROHM : UMT3

EIAJ : SC-70

JEDEC : SOT-323

(1) Emitter

(2) Base

(3) Collector

Collector power dissipation

Junction temperature

Storage temperature

0.2

150

°C

Tstg

−55 to +150

2SC3906K

Packaging specifications and h^FE

1.6

Type

2SC4102

UMT3

2SC3906K

2.8

Package

SMT3

hFE

Marking

Code

∗

T∗

0.3Min.

T106

3000

T146

Each lead has same dimensions

Basic ordering unit (pieces)

3000

ROHM : SMT3

EIAJ : SC-59

JEDEC : SOT-346

(1) Emitter

(2) Base

(3) Collector

Denotes hFE

∗

Electrical characteristics (Ta=25C)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Symbol

BV^CBO

BVCEO

BVEBO

Min.

120

Typ.

−

140

2.5

Max.

−

Unit

Conditions

=50μA

=1mA

−

=50μA

CB=100V

EB=4V

CBO

EBO

CE(sat)

−

180

−

0.5

560

−

μA

Emitter cutoff current

Collector-emitter saturation voltage

DC current transfer ratio

C/I

=10mA/1mA

−

MHz

CE=6V, I

CE=12V, I

CB=12V, I

=2mA

=−2mA, f=100MHz

=0A, f=1MHz

Transition frequency

Output capacitance

Cob

−

www.rohm.com

2012.01 - Rev.B

1/2

12 3

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2SC4102T106/E	ROHM	获取价格	50mA, 120V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SC4102T106/R	ROHM	获取价格	50mA, 120V, NPN, Si, SMALL SIGNAL TRANSISTOR, UMT3, SC-70, 3 PIN
2SC4102T106/RE	ROHM	获取价格	50mA, 120V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SC4102T106/RS	ROHM	获取价格	50mA, 120V, NPN, Si, SMALL SIGNAL TRANSISTOR