Datasheet > 2SC4027_09

2SC4027_09

更新时间： 2022-09-17 15:54:30

品牌	Logo	应用领域
友顺 - UTC		开关高压
页数	文件大小	规格书
5页	146K
描述
HIGH-VOLTAGE SWITCHING APPLICATIONS

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2SC4027_09 数据手册

2SC4027

NPN SILICON TRANSISTOR

ABSOLUTE MAXIMUM RATING (Ta=25°C)

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

RATINGS

UNIT

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

180

160

1.5

Collector Current (Pulse)

I_CP

2.5

Ta=25°C

T_C=25°C

°C

Collector Dissipation

Junction Temperature

Storage Temperature

T_J

150

T_STG

-55 ~+150

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS

MIN TYP MAX UNIT

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Collector Cutoff Current

BV_CBOI_C=10A, I_E=0

180

160

BV_CEOI_C=1mA, R_BE=∞

BV_EBOI_E=10μA, I_C=0

V_CE(SAT)I_C=500mA, I_B=50mA

V_BE(SAT)I_C=500mA, I_B=50mA

0.13 0.45

0.85 1.2

1.0

I_CBO

I_EBO

h_FE1

h_FE2

f_T

V_CB=120V, I_E=0

μA

Emitter Cutoff Current

V_EB=4V, I I_C=0

1.0

V_CE=5V, I_C=100mA

V_CE=5V, I_C=10mA

V_CE=10V, I_C=50mA

V_CB=-10V, f=1MHz

See specified Test Circuit

100

400

DC Current Gain

Gain-Bandwidth Product

Output Capacitance

Turn-On Time

120

MHz

C_ob

T_ON

T_STG

t_F

μs

Storage Time

1.2

μs

Fall Time

μs

CLASSIFICATION OF h_FE1

RANK

RANGE

100~200

140~280

200~400

UNISONIC TECHNOLOGIES CO., LTD

2 of 5

QW-R209-018.B

www.unisonic.com.tw

123 4 5

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