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2SC3739-B13-TP PDF预览

2SC3739-B13-TP

更新时间: 2024-01-09 04:34:21
品牌 Logo 应用领域
美微科 - MCC 光电二极管晶体管
页数 文件大小 规格书
2页 130K
描述
Small Signal Bipolar Transistor, 0.5A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN

2SC3739-B13-TP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:SOT-23
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.65最大集电极电流 (IC):0.5 A
集电极-发射极最大电压:40 V配置:SINGLE
最小直流电流增益 (hFE):100JESD-30 代码:R-PDSO-G3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子面层:MATTE TIN
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:10晶体管元件材料:SILICON
标称过渡频率 (fT):200 MHz最大关闭时间(toff):275 ns
最大开启时间(吨):35 nsBase Number Matches:1

2SC3739-B13-TP 数据手册

 浏览型号2SC3739-B13-TP的Datasheet PDF文件第2页 
M C C  
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2SC3739  
Features  
·
·
High Gain Bandwidth Product: fT=200 MHz (Min.)  
NPN Silicon  
Complementary to 2SA1464  
Epitaxial Transistors  
Maximum Ratings  
Symbol  
VCEO  
VCBO  
VEBO  
IC  
Rating  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current  
Rating  
40  
60  
5.0  
500  
200  
-55 to +150  
-55 to +150  
Unit  
V
V
SOT-23  
A
D
V
mA  
mW  
OC  
OC  
PC  
Collector power dissipation  
Junction Temperature  
Storage Temperature  
B
C
TJ  
TSTG  
F
E
Electrical Characteristics @ 25OC Unless Otherwise Specified  
Symbol  
Parameter  
Min  
Typ  
Max  
Units  
H
G
J
OFF CHARACTERISTICS  
ICBO  
Collector Cutoff Current  
(VCB=40Vdc,IE=0)  
Emitter Cutoff Current  
(VEB=4.0Vdc, IC=0)  
---  
---  
---  
---  
100  
100  
nAdc  
nAdc  
K
IEBO  
DIMENSIONS  
MM  
INCHES  
MIN  
ON CHARACTERISTICS  
DIM  
A
B
C
D
E
MAX  
.120  
.098  
.055  
.041  
.081  
.024  
.0039  
.044  
.007  
.020  
MIN  
2.80  
2.10  
1.20  
.89  
1.78  
.45  
.013  
.89  
MAX  
3.04  
2.64  
1.40  
1.03  
2.05  
.60  
.100  
1.12  
.180  
.51  
NOTE  
.110  
.083  
.047  
.035  
.070  
.018  
.0005  
.035  
.003  
.015  
hFE(1)  
hFE(2)  
VCE(sat)  
VBE(SAT)  
Forward Current Transfer ratio  
---  
---  
(I =150mAdc, VCE=1.0Vdc)  
Forward Current Transfer ratio  
75  
20  
150  
300  
C
(I =500mAdc, VCE=2.0Vdc)  
75  
0.25  
1.0  
---  
0.75  
1.2  
C
F
Collector Saturation Voltage  
G
H
J
(I =500mAdc, IB=50mAdc)  
---  
Vdc  
Vdc  
pF  
C
.085  
.37  
Base Saturation Voltage  
K
(I =500mAdc,IB=50mAdc)  
---  
---  
C
Suggested Solder  
Pad Layout  
Collector Capacitance  
(VCB=10Vdc, I =0, f=1.0MHz)  
Gain Bandwidth product  
(VCE=10Vdc, IE=20mAdc)  
Cob  
fT  
3.5  
8.0  
E
.031  
.800  
200  
---  
---  
400  
---  
---  
---  
35  
225  
275  
MHz  
ns  
ns  
ton  
tstg  
toff  
Turn-on Time  
Storage Time  
Turn-off Time  
VCC=30V,  
IC=150mA  
IB1=IB2=15mA  
.035  
.900  
---  
---  
ns  
.079  
2.000  
inches  
mm  
h
FE CLASSIFICATION  
.037  
.950  
Marking  
hFE1  
B12  
75-150  
B13  
100-200  
B14  
150-300  
.037  
.950  
* Pulse Test PW<350us, duty cycle<2%  
www.mccsemi.com  
Revision: 2  
2003/04/30  

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