Datasheet > 2SC3739B14

2SC3739B14

更新时间： 2024-02-15 05:54:29

品牌	Logo	应用领域
商朗 - LUNSURE		开关光电二极管晶体管
页数	文件大小	规格书
2页	83K
描述
Transistor

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数据手册

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2SC3739B14 数据手册

Shanghai Lunsure Electronic

Technology Co.,Ltd

Tel:0086-21-37185008

Fax:0086-21-57152769

2SC3739

Features

High Gain Bandwidth Product: f_T=200 MHz (Min.)

Complementary to 2SA1464

NPN Silicon

Epitaxial Transistors

Maximum Ratings

Symbol

V_CEO

V_CBO

V_EBO

I_C

Rating

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current

Rating

5.0

500

200

-55 to +150

Unit

SOT-23

^OC

P_C

Collector power dissipation

Junction Temperature

Storage Temperature

T_J

T_STG

Electrical Characteristics @ 25^OC Unless Otherwise Specified

Symbol

Parameter

Min

Typ

Max

Units

OFF CHARACTERISTICS

I_CBO

Collector Cutoff Current

(V_CB=40Vdc,I_E=0)

Emitter Cutoff Current

(V_EB=4.0Vdc, I_C=0)

---

100

nAdc

I_EBO

DIMENSIONS

INCHES

MIN

ON CHARACTERISTICS

DIM

MAX

.120

.098

.055

.041

.081

.024

.0039

.044

.007

.020

MIN

2.80

2.10

1.20

.89

1.78

.45

.013

.89

MAX

3.04

2.64

1.40

1.03

2.05

.60

.100

1.12

.180

.51

NOTE

.110

.083

.047

.035

.070

.018

.0005

.035

.003

.015

h_FE(1)

h_FE(2)

V_CE(sat)

V_BE(SAT)

Forward Current Transfer ratio

---

(I =150mAdc, V_CE=1.0Vdc)

Forward Current Transfer ratio

150

300

(I =500mAdc, V_CE=2.0Vdc)

0.25

1.0

---

0.75

1.2

Collector Saturation Voltage

(I =500mAdc, I_B=50mAdc)

---

Vdc

.085

.37

Base Saturation Voltage

(I =500mAdc,I_B=50mAdc)

---

Suggested Solder

Pad Layout

Collector Capacitance

(V_CB=10Vdc, I =0, f=1.0MHz)

Gain Bandwidth product

(V_CE=10Vdc, I_E=20mAdc)

C_ob

f_T

3.5

8.0

.031

.800

200

---

400

---

225

275

MHz

t_on

t_stg

t_off

Turn-on Time

Storage Time

Turn-off Time

V_CC=30V,

I_C=150mA

I_B1=I_B2=15mA

.035

.900

---

.079

2.000

inches

FE CLASSIFICATION

.037

.950

Marking

h_FE1

B12

75-150

B13

100-200

B14

150-300

.037

.950

* Pulse Test PW<350us, duty cycle<2%

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