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2SC3468-E PDF预览

2SC3468-E

更新时间： 2023-02-26 15:19:20
品牌 Logo 应用领域
安森美 - ONSEMI 放大器晶体管
页数 文件大小 规格书
5页 46K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-226, SC-51, 3 PIN

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2SC3468-E 技术参数

生命周期：Active包装说明：MP, 3 PIN
针数：3Reach Compliance Code：unknown
风险等级：5.26最大集电极电流 (IC)：0.1 A
集电极-发射极最大电压：300 V配置：SINGLE
最小直流电流增益 (hFE)：100JESD-30 代码：O-PBCY-T3
元件数量：1端子数量：3
封装主体材料：PLASTIC/EPOXY封装形状：ROUND
封装形式：CYLINDRICAL极性/信道类型：NPN
认证状态：COMMERCIAL表面贴装：NO
端子形式：THROUGH-HOLE端子位置：BOTTOM
晶体管应用：AMPLIFIER晶体管元件材料：SILICON
标称过渡频率 (fT)：150 MHzBase Number Matches：1

2SC3468-E 数据手册

 浏览型号2SC3468-E的Datasheet PDF文件第2页浏览型号2SC3468-E的Datasheet PDF文件第3页浏览型号2SC3468-E的Datasheet PDF文件第4页浏览型号2SC3468-E的Datasheet PDF文件第5页 
Ordering number:ENN1413D  
PNP/NPN Epitaxial Planar Silicon Transistors  
2SA1371/2SC3468  
High-Definition CRT Display,  
Video Output Applications  
Use  
Package Dimensions  
unit:mm  
· Color TV chroma output and high breakdown voltage  
driver.  
2006B  
[2SA1371/2SC3468]  
6.0  
5.0  
Features  
4.7  
· High breakdown votage : V  
≥300V.  
CEO  
· Small reverse transfer capacitance and excellent high  
frequency characteristic  
: C =1.8pF (NPN), 2.3pF (PNP).  
0.5  
0.6  
re  
· Adoption of MBIT process.  
0.5  
0.5  
2
3
1
1 : Emitter  
2 : Collector  
3 : Base  
( ) : 2SA1371  
1.45  
1.45  
Specifications  
SANYO :MP  
Absolute Maximum Ratings at Ta = 25˚C  
Parameter  
Collector-to-Base Voltage  
Symbol  
Conditions  
Ratings  
Unit  
V
(–)300  
(–)300  
(–)5  
V
V
CBO  
Collector-to-Emitter Voltage  
Emitter-to-Base Voltage  
Collector Current  
V
CEO  
V
V
EBO  
I
(–)100  
(–)200  
1.0  
mA  
mA  
W
C
Collector Current (Pulse)  
Collector Dissipation  
Junction Temperature  
Storage Temperature  
I
CP  
P
C
Tj  
150  
˚C  
˚C  
Tstg  
–55 to +150  
Electrical Characteristics at Ta = 25˚C  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
max  
Collector Cutoff Current  
I
V
V
V
V
I
=(–)200V, I =0  
(–)0.1  
(–)0.1  
320*  
µA  
µA  
CBO  
CB E  
Emitter Cutoff Current  
I
(–)4V, I =0  
EBO  
EB=  
C
DC Current Gain  
h
=(–)10V, I =(–)10mA  
C
=(–)30V, I =(–)10mA  
C
40*  
FE  
CE  
CE  
Gain-Bandwidth Product  
f
150  
MHz  
V
T
Collector-to-Emitter Saturation Voltage  
Base-to-Emitter Saturation Voltage  
V
V
=(–)20mA, I =(–)2mA  
B
=(–)20mA, I =(–)2mA  
B
(–)0.6  
(–)1.0  
CE(sat)  
BE(sat)  
C
I
V
C
* : The 2SA1371/2SC3468 are classified by 10mA h as follows :  
Continued on next page.  
FE  
Rank  
C
D
E
F
h
40 to 80  
60 to 120  
100 to 200 160 to 320  
FE  
Any and all SANYO products described or contained herein do not have specifications that can handle  
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s  
control systems, or other applications whose failure can be reasonably expected to result in serious  
physical and/or material damage. Consult with your SANYO representative nearest you before using  
any SANYO products described or contained herein in such applications.  
SANYO assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other  
parameters) listed in products specifications of any and all SANYO products described or contained  
herein.  
SANYO Electric Co.,Ltd. Semiconductor Company  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
92502AS (KT)/71598HA (KT)/3237KI/3135KI/1114KI, MT No.1413-1/5  
12345

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与2SC3468-E相关器件

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2SC3468E-AE ONSEMI

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 		100mA, 300V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-226
2SC3468E-AF ONSEMI

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 		Small Signal Bipolar Transistor, 0.1A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-226
2SC3468F ONSEMI

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 		TRANSISTOR 100 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-226, SC-51, 3 PIN, BIP Gene
2SC3468F-AE ONSEMI

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 		Small Signal Bipolar Transistor, 0.1A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-226
2SC3468F-AJ ONSEMI

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 		Small Signal Bipolar Transistor, 0.1A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-226
2SC3468G-D-AB3-R UTC

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 		Small Signal Bipolar Transistor
2SC3468G-E-AB3-R UTC

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 		Small Signal Bipolar Transistor
2SC3468G-F-AB3-R UTC

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 		Small Signal Bipolar Transistor
2SC3468G-X-AB3-R UTC

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 		HIGH VOLTAGE TRANSISTOR FOR VIDEO OUTPUT
2SC3468L UTC

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 		Small Signal Bipolar Transistor, 0.1A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, LEAD F

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