Datasheet > 2SC3138-Y(TE85L)

2SC3138-Y(TE85L)

更新时间： 2024-02-23 06:32:55

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
5页	232K
描述
2SC3138-Y(TE85L)

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技术参数
数据手册

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2SC3138-Y(TE85L) 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Base Number Matches：	1

2SC3138-Y(TE85L) 数据手册

2SC3138

TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process)

2SC3138

High Voltage Switching Applications

Unit: mm

•

High voltage: V

= 200 V (max)

CBO

CEO

•

Small flat package

Complementary to 2SA1255

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

200

Collector-emitter voltage

Emitter-base voltage

Collector current

°C

Base current

Collector power dissipation

Junction temperature

Storage temperature range

150

125

−55~125

JEDEC

JEITA

TO-236MOD

stg

SC-59

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

TOSHIBA

2-3F1A

Weight: 0.012 g (typ.)

operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Marking

2007-11-01

12 3 4 5

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