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2SC2758-T1BU12 PDF预览

2SC2758-T1BU12

更新时间: 2024-09-21 14:49:39
品牌 Logo 应用领域
日电电子 - NEC 放大器光电二极管晶体管
页数 文件大小 规格书
4页 139K
描述
RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, PLASTIC, SC-59, 3 PIN

2SC2758-T1BU12 技术参数

生命周期:Obsolete包装说明:PLASTIC, SC-59, 3 PIN
Reach Compliance Code:unknown风险等级:5.84
Is Samacsys:N其他特性:WITH AGC CLASSIFICATION
最大集电极电流 (IC):0.02 A基于收集器的最大容量:0.8 pF
集电极-发射极最大电压:25 V配置:SINGLE
最小直流电流增益 (hFE):60最高频带:ULTRA HIGH FREQUENCY BAND
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3最高工作温度:125 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:NPN
最小功率增益 (Gp):14 dB认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):1000 MHz
Base Number Matches:1

2SC2758-T1BU12 数据手册

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