Datasheet > 2SC0829(2SC829)

2SC0829(2SC829)

更新时间： 2024-02-08 17:04:53

品牌	Logo	应用领域
其他 - ETC		晶体放大器晶体管信号器
页数	文件大小	规格书
4页	73K
描述
Small-signal device - Small-signal transistor - High-Frequency Amplifiers·VCO and Others

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2SC0829(2SC829) 数据手册

Transistor

2SC0829 (2SC829)

Silicon NPN epitaxial planar type

Unit: mm

For high-frequency amplification

5.0±0.2

4.0±0.2

■ Features

• Optimum for RF amplification, oscillation, mixing, and IF stage

of FM/AM radios

0.7±0.1

■ Absolute Maximum Ratings T_a= 25°C

+0.15

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_C

Rating

Unit

0.45

–0.1

+0.6

2.5

–0.2

2.5

–0.2

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

1: Emitter

2: Collector

3: Base

°C

EIAJ: SC-43A

TO-92-B1 Package

Collector power dissipation

Junction temperature

Storage temperature

P_C

400

T_j

150

T_stg

−55 to +150

■ Electrical Characteristics T_a= 25°C

Parameter

Symbol

V_CBO

V_CEO

V_EBO

h_FE

Conditions

Min

Typ

Max

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

_C= 10 µA, I_E= 0

_C= 2 mA, I_B= 0

I_E= 10 µA, I_C= 0

Forward current transfer ratio ^*

Transition frequency

_CE= 10 V, I_C= 1 mA

150

250

f_T

_CB= 10 V, I_C= 1 mA, f = 200 MHz

_CE= 10 V, I_C= 1 mA, f = 10.7 MHz

_CB= 10 V, I_E= −1 mA, f = 2 MHz

230

1.3

MHz

Common emitter reverse transfer capacitance

Reverse transfer impedance

C_re

1.6

Z_rb

Ω

Note) : h_FERank classification

Rank

h_FE

70 to 160

110 to 250

Note) The part number in the parenthesis shows conventional part number.

Publication date: March 2002

SJC00098BED

12 3 4

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