2SB776

更新时间： 2024-02-11 16:38:05

品牌	Logo	应用领域
友顺 - UTC		晶体晶体管
页数	文件大小	规格书
3页	61K
描述
MEDIUM POWER LOW VOLTAGE TRANSISTOR

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

2SB776 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84

2SB776 数据手册

UTC2SB776

PNPEPITAXIAL SILICON TRANSISTOR

MEDIUM POWER LOW VOLTAGE

TRANSISTOR

DESCRIPTION

The UTC 2SB776 is a medium power low voltage

transistor, designed for audio power amplifier, DC-DC

converter and voltage regulator.

FEATURES

*High current output up to 3A

*Low saturation voltage

*Complement to 2SD886

TO-126

1:EMITTER 2:COLLECTOR 3:BASE

ABSOLUTE MAXIMUM RATINGS ^{( Ta=25°C ,unless otherwise specified )}

PARAMETER

Collector-Base Voltage

SYMBOL

VCBO

VCEO

VEBO

VALUE

UNIT

-50

-5

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Dissipation (Tc=25°C)

Collector Dissipation (Ta=25°C)

Collector Current (DC)

Collector Current (PULSE)

Base Current

-3

-7

-0.6

Junction Temperature

Storage Temperature

TSTG

150

-55 ~ +150

°C

ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)

PARAMETER

Collector Cut-Off Current

Emitter Cut-Off Current

DC Current Gain(note 1)

SYMBOL

ICBO

TEST CONDITIONS

VCB=-50V,IE=0

MIN TYP MAX UNIT

-1000

IEBO

hFE1

hFE2

VCE(sat)

VBE(sat)

VEB=-3V,Ic=0

VCE=-2V, Ic=-20mA

VCE=-2V, Ic=-1A

Ic=-2A,IB=-0.2A

VCE=-5V,Ic=-0.1A

VCB=-10V,IE=0,f=1MHz

100

200

150

-0.3

-1.0

400

-0.5

-2.0

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Current Gain Bandwidth Product

Output Capacitance

MHz

Cob

Note 1:Pulse test:PW<300µs,Duty Cycle<2%

UTC UNISONIC TECHNOLOGIES CO. LTD

QW-R204-003,A

12 3

中文翻译

下载PDF

与2SB776相关器件

型号	品牌	获取价格	描述	数据表
2SB776_10	UTC	获取价格	MEDIUM POWER LOW VOLTAGE TRANSISTOR
2SB776_15	JMNIC	获取价格	Silicon PNP Power Transistors
2SB776_2014	JMNIC	获取价格	Silicon PNP Power Transistors
2SB776D	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 100V V(BR)CEO \| 7A I(C) \| TO-218VAR
2SB776E	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 100V V(BR)CEO \| 7A I(C) \| TO-218VAR
2SB776-E-T60-K	UTC	获取价格	Power Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/
2SB776-E-TN3-R	UTC	获取价格	Power Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic/
2SB776G-E-TN3-R	UTC	获取价格	暂无描述
2SB776G-P-T60-K	UTC	获取价格	Power Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/
2SB776G-P-TN3-R	UTC	获取价格	Power Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic/