Datasheet > 2SB726S

2SB726S

更新时间： 2024-09-24 23:20:07

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
3页	63K
描述
TRANSISTOR \| BJT \| PNP \| 80V V(BR)CEO \| 100MA I(C) \| TO-92

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中文翻译

获取价格

数据手册

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2SB726S 数据手册

Transistor

2SB0726 (2SB726)

Silicon PNP epitaxial planer type

For general amplification

Unit: mm

4.0 0.2

5.0 0.2

Features

High foward current transfer ratio h_FE

High collector to emitter voltage V_CEO

Absolute Maximum Ratings (Ta=25˚C)

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_C

Ratings

–80

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

0.45–⁺0⁰.^.1²

0.45⁺^–0⁰^.^.¹²

–80

1.27

–5

–100

250

˚C

1 2 3

1:Emitter

Collector power dissipation

Junction temperature

Storage temperature

P_C

2:Collector

3:Base

JEDEC:TO–92

EIAJ:SC–43A

T_j

150

2.54 0.15

T_stg

–55 ~ +150

˚C

Electrical Characteristics (Ta=25˚C)

Parameter

Symbol

I_CBO

Conditions

min

typ

max

–100

–1

Unit

V_CB= –10V, I_E= 0

µA

Collector cutoff current

I_CEO

V_CE= –10V, I_B= 0

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

V_CBO

V_CEO

V_EBO

I_C= –10µA, I_E= 0

–80

–5

I_C= –2mA, I_B= 0

I_E= –10µA, I_C= 0

Forward current transfer ratio

h_FE

V_CB= –5V, I_E= –2mA

I_C= –20mA, I_B= –2mA

V_CE= –1V, I_C= –100mA

V_CB= –5V, I_E= 2mA, f = 200MHz

180

700

– 0.6

–1.2

Collector to emitter saturation voltage V_CE(sat)

Base to emitter voltage

Transition frequency

V_BE

f_T

–1

150

MHz

^*h_FERank classification

Rank

h_FE

180 ~ 360

260 ~ 520

360 ~ 700

Note.) The Part number in the Parenthesis shows conventional part number.

12 3

中文翻译

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