Datasheet > 2SB1443_11

2SB1443_11

更新时间： 2024-09-22 07:30:07

品牌	Logo	应用领域
罗姆 - ROHM		晶体晶体管
页数	文件大小	规格书
3页	148K
描述
Power Transistor (?50V, ?2A)

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中文翻译

获取价格

数据手册

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2SB1443_11 数据手册

Power Transistor (−50V, −2A)

2SB1443

Features

Dimensions (Unit : mm)

1) Low saturation voltage.

ATV

V^{CE (sat)}= −0.35V (Max.) at IC / IB = −1A / 50mA.

2) Excellent DC current gain characteristics.

Absolute maximum ratings (Ta=25C)

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Symbol

Limits

Unit

(1) (2) (3)

(1) Emitter

VCBO

VCEO

VEBO

−50

−6

(2) Collector

(3) Base

−2

−5

A (DC)

A (Pulse)

Collector current

∗

Collector power dissipation

Junction temperature

Storage temperature

∗1 Single pulse, Pw=10ms

150

°C

Tstg

−55 to +150

∗2 Printed circuit board 1.7mm thick, collector plating 1cm or larger.

Packaging specifications and h^FE

Type

2SB1443

ATV

Package

hFE

Marking

Code

−

TV2

2500

Basic ordering unit (pieces)

∗Denotes hFE

Electrical characteristics (Ta=25C)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

BV^CBO

BVCEO

BVEBO

−50

−6

−

120

−

=−50μA

=−1mA

=−50μA

CB=−50V

EB=−5V

CBO

EBO

CE(sat)

−0.1

−0.35

270

−

μA

Emitter cutoff current

∗

Collector-emitter saturation voltage

DC current transfer ratio

−0.15

−

200

=−1A/−50mA

=−2V/−0.5A

CE=−2V, I =0.5A, f=100MHz

CB=−10V, I =0A, f=1MHz

−

MHz

CE/IC

Transition frequency

Output capacitance

Cob

−

∗ Measured using pulse current

www.rohm.com

2011.06 - Rev.B

1/2

12 3

中文翻译

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