Datasheet > 2SB1116

2SB1116

更新时间： 2024-09-29 04:25:51

品牌	Logo	应用领域
友顺 - UTC		晶体晶体管开关
页数	文件大小	规格书
4页	103K
描述
PNP EPITAXIAL SILICON TRANSISTOR

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中文翻译

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数据手册

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2SB1116 数据手册

UTC 2SB1116/A

PNP EPITAXIAL SILICON TRANSISTOR

PNP EPITAXIAL SILICON

TRANSISTOR

DESCRIPTION

* Complement to 2SD1616/A

APPLICATIONS

* Audio Frequency Power Amplifier

* Medium Speed Switching

TO-92

1: Emitter 2: Collector 3: Base

ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

2SB1116

-60

-80

V^CBO

2SB1116A

Collector-Emitter Voltage

2SB1116

-50

-60

-6

V^CEO

2SB1116A

Emitter-Base Voltage

Collector Current (DC)

Collector Current (Pulse)*

Collector Power Dissipation

Junction Temperature

Storage Temperature

*PW≦10ms,Duty Cycle≦50%

VEBO

°C

-1

-2

Icp

0.75

150

Tstg

-55 ~ +150

ELECTRICAL CHARACTERISTICS (Ta=25°C)

PARAMETER

Collector Cut-off Current

Emitter Cut-off current

DC Current Gain*

SYMBOL

ICBO

TEST CONDITIONS

MIN

TYP

MAX

UNIT

VCB=-60V,IE=0

VEB=-6V,Ic=0

-100

IEBO

2SB1116

VCE=-2V,Ic=-100mA

135

600

400

hFE1

hFE2

2SB1116A

VCE=-2V,Ic=-1A

VBE(on) VCE=-2V,Ic=-50mA

Base-Emitter On Voltage*

-600

-650

-0.2

-0.9

120

0.07

-700

-0.3

-1.2

Collector-Emitter Saturation Voltage* VCE(sat) Ic=-1A,IB=-50mA

Base-Emitter Saturation Voltage*

Output Capacitance

VBE(sat) Ic=-1A,IB=-50mA

Cob

tON

tSTG

VCB=-10V,IE=0,f=1MHz

Current Gain Bandwidth Product

Turn On Time

VCE=-2V,Ic=-100mA

MHz

μs

Vcc=-10V,Ic=-100mA

IB1=-IB2=-10mA

Storage Time

Fall Time

0.7

0.07

μs

VBE(off)=2 ~ 3V

*Pulse Test: PW≦350µs, Duty Cycle≦2%

UTC UNISONIC TECHNOLOGIES CO., LTD.

QW-R201-066,A

12 3 4

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