5秒后页面跳转
2SB0932(2SB932) PDF预览

2SB0932(2SB932)

更新时间: 2022-01-22 01:05:00
品牌 Logo 应用领域
其他 - ETC 晶体晶体管
页数 文件大小 规格书
4页 61K
描述
2SB0932 (2SB932) - PNP Transistor

2SB0932(2SB932) 数据手册

 浏览型号2SB0932(2SB932)的Datasheet PDF文件第2页浏览型号2SB0932(2SB932)的Datasheet PDF文件第3页浏览型号2SB0932(2SB932)的Datasheet PDF文件第4页 
Power Transistors  
2SB0932 (2SB932)  
Silicon PNP epitaxial planar type  
Unit: mm  
3.4±0.3  
8.5±0.2  
6.0±0.5  
For power switching  
1.0±0.1  
Complementary to 2SD1255  
Features  
1.5max.  
1.1max.  
0.5max.  
Low collector to emitter saturation voltage VCE(sat)  
Satisfactory linearity of foward current transfer ratio hFE  
0.8±0.1  
Large collector current IC  
2.54±0.3  
N type package enabling direct soldering of the radiating fin to  
5.08±0.5  
the printed circuit board, etc. of small electronic equipment.  
1:Base  
2:Collector  
3:Emitter  
1
2
3
N Type Package  
Absolute Maximum Ratings (T =25˚C)  
C
Unit: mm  
3.4±0.3  
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
ICP  
Ratings  
Unit  
V
8.5±0.2  
6.0±0.3  
1.0±0.1  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Peak collector current  
Collector current  
–130  
–80  
V
–7  
V
–8  
A
IC  
–4  
35  
A
R0.5  
R0.5  
0.8±0.1  
Collector power TC=25°C  
0 to 0.4  
2.54±0.3  
1.1 max.  
PC  
W
5.08±0.5  
dissipation  
Ta=25°C  
1.3  
Junction temperature  
Storage temperature  
Tj  
150  
˚C  
˚C  
1:Base  
2:Collector  
3:Emitter  
1
2
3
Tstg  
–55 to +150  
N Type Package (DS)  
Electrical Characteristics (T =25˚C)  
C
Parameter  
Symbol  
ICBO  
Conditions  
min  
typ  
max  
–10  
–50  
Unit  
µA  
µA  
V
Collector cutoff current  
Emitter cutoff current  
VCB = –100V, IE = 0  
IEBO  
VCEO  
hFE1  
VEB = –5V, IC = 0  
IC = –10mA, IB = 0  
Collector to emitter voltage  
–80  
45  
V
CE = –2V, IC = – 0.1A  
Forward current transfer ratio  
*
hFE2  
VCE = –2V, IC = –1A  
90  
260  
– 0.5  
–1.5  
Collector to emitter saturation voltage VCE(sat)  
Base to emitter saturation voltage VBE(sat)  
IC = –3A, IB = – 0.15A  
V
V
IC = –3A, IB = – 0.15A  
Transition frequency  
Turn-on time  
Storage time  
Fall time  
fT  
ton  
tstg  
tf  
VCE = –10V, IC = – 0.5A, f = 10MHz  
30  
MHz  
µs  
0.15  
0.8  
IC = –1A, IB1 = – 0.1A, IB2 = 0.1A  
µs  
0.15  
µs  
*hFE2 Rank classification  
Rank  
hFE2  
Q
P
90 to 180  
130 to 260  
Note) The part number in the parenthesis shows conventional part number.  
1

与2SB0932(2SB932)相关器件

型号 品牌 描述 获取价格 数据表
2SB0932|2SB932 ETC Power Device - Power Transistors - General-Purpose power amplification

获取价格

2SB0932P ETC TRANSISTOR | BJT | PNP | 130V V(BR)CEO | 4A I(C) | TO-263AB

获取价格

2SB0932Q ETC TRANSISTOR | BJT | PNP | 130V V(BR)CEO | 4A I(C) | TO-263AB

获取价格

2SB0933 PANASONIC For Power Switching

获取价格

2SB0933(2SB933) ETC パワーデバイス - パワートランジスタ - 汎用電力増幅

获取价格

2SB0933|2SB933 ETC Power Device - Power Transistors - General-Purpose power amplification

获取价格