Power Transistors
2SB0932 (2SB932)
Silicon PNP epitaxial planar type
Unit: mm
3.4±0.3
8.5±0.2
6.0±0.5
For power switching
1.0±0.1
Complementary to 2SD1255
Features
■
1.5max.
1.1max.
0.5max.
●
Low collector to emitter saturation voltage VCE(sat)
Satisfactory linearity of foward current transfer ratio hFE
●
0.8±0.1
●
Large collector current IC
2.54±0.3
●
N type package enabling direct soldering of the radiating fin to
5.08±0.5
the printed circuit board, etc. of small electronic equipment.
1:Base
2:Collector
3:Emitter
1
2
3
N Type Package
Absolute Maximum Ratings (T =25˚C)
■
C
Unit: mm
3.4±0.3
Parameter
Symbol
VCBO
VCEO
VEBO
ICP
Ratings
Unit
V
8.5±0.2
6.0±0.3
1.0±0.1
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
–130
–80
V
–7
V
–8
A
IC
–4
35
A
R0.5
R0.5
0.8±0.1
Collector power TC=25°C
0 to 0.4
2.54±0.3
1.1 max.
PC
W
5.08±0.5
dissipation
Ta=25°C
1.3
Junction temperature
Storage temperature
Tj
150
˚C
˚C
1:Base
2:Collector
3:Emitter
1
2
3
Tstg
–55 to +150
N Type Package (DS)
Electrical Characteristics (T =25˚C)
■
C
Parameter
Symbol
ICBO
Conditions
min
typ
max
–10
–50
Unit
µA
µA
V
Collector cutoff current
Emitter cutoff current
VCB = –100V, IE = 0
IEBO
VCEO
hFE1
VEB = –5V, IC = 0
IC = –10mA, IB = 0
Collector to emitter voltage
–80
45
V
CE = –2V, IC = – 0.1A
Forward current transfer ratio
*
hFE2
VCE = –2V, IC = –1A
90
260
– 0.5
–1.5
Collector to emitter saturation voltage VCE(sat)
Base to emitter saturation voltage VBE(sat)
IC = –3A, IB = – 0.15A
V
V
IC = –3A, IB = – 0.15A
Transition frequency
Turn-on time
Storage time
Fall time
fT
ton
tstg
tf
VCE = –10V, IC = – 0.5A, f = 10MHz
30
MHz
µs
0.15
0.8
IC = –1A, IB1 = – 0.1A, IB2 = 0.1A
µs
0.15
µs
*hFE2 Rank classification
Rank
hFE2
Q
P
90 to 180
130 to 260
Note) The part number in the parenthesis shows conventional part number.
1