Datasheet > 2SAR552P

2SAR552P

更新时间： 2024-02-01 11:39:53

品牌	Logo	应用领域
罗姆 - ROHM		晶体晶体管
页数	文件大小	规格书
5页	236K
描述
Midium Power Transistors (-30V / -3A)

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技术参数
数据手册

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2SAR552P 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	Base Number Matches：	1

2SAR552P 数据手册

Midium Power Transistors (-30V / -3A)

2SAR552P

 Structure

 Dimensions (Unit : mm)

PNP Silicon epitaxial planar transistor

 Features

1) Low saturation voltage, typically

V_{CE (sat)}= -0.4V (Max.) (I_C/ I_B= -1A / -50mA)

(1)

(2) (3)

2) High speed switching

 Applications

Abbreviated symbol : MF

Driver

 Packaging specifications

 Inner circuit (Unit : mm)

Package

Taping

T100

Type

Code

Basic ordering unit (pieces) 1000

2SAR552P



 Absolute maximum ratings (Ta = 25C)

(1) Base

(2) Collector

(3) Emitter

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Symbol

Limits

Unit

V_CBO

V_CEO

V_EBO

I_C

-30

-6

-3

Collector current

Pulsed

I_CP

P_D

T_j

-6

0.5

C

Power dissipation

Junction temperature

150

Range of storage temperature

T_stg

-55 to 150

*1 Pw=10ms, Single Pulse

*2 Each terminal mounted on a recommended land.

*3 Mounted on a ceramic board. (40x40x0.7mm³)

www.rohm.com

2009.12 - Rev.A

1/4

12 3 4 5

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