2SA675L

更新时间： 2024-01-07 06:14:10

品牌	Logo	应用领域
日电电子 - NEC		晶体晶体管驱动
页数	文件大小	规格书
4页	91K
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数据手册

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2SA675L 数据手册

DATA SHEET

SILICON TRANSISTOR

2SA675

PNP SILICON EPITAXIAL TRANSISTOR

FOR DRIVING FLUORESCENT INDICATOR PANNEL

PACKAGE DRAWING (UNIT: mm)

The 2SA675 is a resin sealed mold transistor and is ideal for

dynamic drivers of counting indicator pannel such as fluorescent

indicator pannel due to high voltage.

•

High voltage

V^CBO> −80 V, V^CER> −80 V

Excellent linearity for current of DC current gain

ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Symbol

V^CBO

V^CER*

V^EBO

I^C

Ratings

−80

Unit

−80

−5.0

−100

°C

Total power dissipation

Junction temperature

Storage temperature

* R^BE= 30 kΩ

P^T

250

T^j

125

−55 to +125

T^stg

ELECTRICAL CHARACTERISTICS (Ta = 25°C)

Parameter

Collector cutoff current

Emitter cutoff current

DC current gain

Symbol

I^CBO

Conditions

V^CB= –60 V, I^E= 0

V^EB= –3.0 V, I^C= 0

MIN.

TYP.

MAX.

−1.0

Unit

µA

I^EBO

h^FE1

h^FE2

V^CE(sat)

V^BE(sat)

f^T

V^CE= –3.0 V, I^C= –1.0 mA

V^CE= –3.0 V, I^C= –20 mA

I^C= –20 mA, I^B= –1.0 mA

V^CE= –6.0 V, I^E= 10 mA

V^CB= –10 V, I^E= 0, f = 1.0 MHz

Refer to the test circuit.

120

DC current gain

300

−0.10

−0.74

170

−1.50

−1.20

Collector saturation voltage

Base saturation voltage

Gain bandwidth product

Output capacitance

Storage time

100

MHz

µs

C^ob

4.5

t^stg

0.5

1.0

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. D16146EJ3V0DS00

Date Published April 2002 N CP(K)

Printed in Japan

2002

1998

12 3 4

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