Datasheet > 2SA684_11

2SA684_11

更新时间： 2022-09-16 17:26:26

品牌	Logo	应用领域
SECOS		晶体晶体管
页数	文件大小	规格书
3页	739K
描述
PNP Plastic Encapsulated Transistor

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SA684_11 数据手册

2SA684

-1A , -60V

PNP Plastic Encapsulated Transistor

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

TO-92L

FEATURE

ꢀ

Automatic insertion by radial taping possible.

Complementary pair with 2SC1384L.

1Emitter

2Collector

3Base

ꢀ

CLASSIFICATION OF h_FE

Millimeter

REF.

Min.

4.70

7.80

13.80

3.70

0.35

Max.

Product-Rank

2SA684-Q

2SA684-R

120~240

2SA684-S

170~340

5.10

8.20

14.20

4.10

0.55

0.45

Range

85~170

1.27 TYP.

1.28

2.44

0.60

1.58

2.64

0.80

Collector

Base

Emitter

ABSOLUTE MAXIMUM RATINGS (T_A= 25°C unless otherwise specified)

Parameter

Symbol

Ratings

Unit

Collector to Base Voltage

V_CBO

V_CEO

V_EBO

I_C

-60

Collector to Emitter Voltage

Emitter to Base Voltage

-50

-5

Collector Current - Continuous

Collector Power Dissipation

Junction, Storage Temperature

-1

P_C

°C

T_J, T_STG

150, -55~150

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Min.

Typ.

Max.

Unit

Test Conditions

-60

-50

-5

I_C= -10µA, I_E=0

I_C= -2mA, I_B=0

I_E= -10µA, I_C=0

-0.1

340

µA

V_CB= -20V, I_E=0

h_{FE (1)}

V_CE= -10V, I_C= -500mA

V_CE= -5V, I_C= -1A

DC Current Gain

h_{FE (2)}

Collector to Emitter Saturation Voltage

Base-Emitter Voltage

V_CE(sat)

V_BE(sat)

f_T

-0.2

-0.85

200

-0.4

-1.2

I_C= -500mA, I_B= -50mA

Transition Frequency

MHz

V_CE= -10V, I_E=50mA , f=200MHz

V_CB= -10V, I_E=0, f=1MHz

Collector Output Capacitance

C_Ob

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

21-Jan-2011 Rev. B

Page 1 of 3

12 3

下载PDF

与2SA684_11相关器件

型号	品牌	描述	获取价格	数据表
2SA684G-Q-AB3-R	UTC	Small Signal Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, HALOGEN F	获取价格
2SA684G-Q-T9N-B	UTC	Small Signal Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO	获取价格
2SA684G-R-AB3-R	UTC	Small Signal Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, HALOGEN F	获取价格
2SA684G-S-AB3-R	UTC	Small Signal Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, HALOGEN F	获取价格
2SA684G-X-AB3-R	UTC	PNP SILICON TRANSISTOR	获取价格
2SA684G-X-T9N-B	UTC	PNP SILICON TRANSISTOR	获取价格