生命周期: | Obsolete | Reach Compliance Code: | unknown |
风险等级: | 5.8 | 最大集电极电流 (IC): | 0.05 A |
配置: | SINGLE | 最小直流电流增益 (hFE): | 100 |
JEDEC-95代码: | TO-92 | JESD-30 代码: | O-PBCY-T3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 125 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | ROUND | 封装形式: | CYLINDRICAL |
极性/信道类型: | PNP | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | BOTTOM | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 130 MHz |
VCEsat-Max: | 0.9 V | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2SA639SR | NEC | Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, PNP, Silicon, TO-92, |
获取价格 |
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2SA640 | NEC | Small Signal Bipolar Transistor, 0.05A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, |
获取价格 |
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2SA640E | NEC | Small Signal Bipolar Transistor, 0.05A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, |
获取价格 |
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2SA640F | NEC | Small Signal Bipolar Transistor, 0.05A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, |
获取价格 |
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2SA640U | NEC | Small Signal Bipolar Transistor, 0.05A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, |
获取价格 |
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2SA641 | ETC | PNP SILICON EPITAXIAL TRANSISTOR |
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