Datasheet > 2SA649

2SA649

更新时间： 2022-12-24 02:01:58

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
3页	153K
描述
Silicon PNP Power Transistors

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2SA649 数据手册

Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors

2SA648

DESCRIPTION

·With TO-3 package

·Wide area of safe operation

APPLICATIONS

·For low frequency and large power

switching applications

PINNING(see Fig.2)

DESCRIPTION

Base

Emitter

Fig.1 simplified outline (TO-3) and symbol

Collector

Absolute maximum ratings(Ta=℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

VALUE

-120

-6

UNIT

Open emitter

Open base

Open collector

-7

I_CM

Collector current-peak

Collector power dissipation

Junction temperature

Storage temperature

-11

P_C

T_C=25℃

℃

T_j

150

T_stg

-55~150

12 3

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