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2SA1740E-TD-E PDF预览

2SA1740E-TD-E

更新时间： 2024-02-23 19:48:37
品牌 Logo 应用领域
罗彻斯特 - ROCHESTER 放大器PC晶体管
页数 文件大小 规格书
5页 798K
描述
200mA, 400V, PNP, Si, SMALL SIGNAL TRANSISTOR, ROHS COMPLIANT, PCP, 3 PIN

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2SA1740E-TD-E 技术参数

生命周期：Active包装说明：ROHS COMPLIANT, PCP, 3 PIN
针数：3Reach Compliance Code：unknown
风险等级：5.42外壳连接：COLLECTOR
最大集电极电流 (IC)：0.2 A集电极-发射极最大电压：400 V
配置：SINGLE最小直流电流增益 (hFE)：100
JESD-30 代码：R-PSSO-F3元件数量：1
端子数量：3封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
极性/信道类型：PNP认证状态：COMMERCIAL
表面贴装：YES端子形式：FLAT
端子位置：SINGLE晶体管应用：AMPLIFIER
晶体管元件材料：SILICON标称过渡频率 (fT)：70 MHz
Base Number Matches：1

2SA1740E-TD-E 数据手册

 浏览型号2SA1740E-TD-E的Datasheet PDF文件第1页浏览型号2SA1740E-TD-E的Datasheet PDF文件第3页浏览型号2SA1740E-TD-E的Datasheet PDF文件第4页浏览型号2SA1740E-TD-E的Datasheet PDF文件第5页 
Ordering number:EN3188  
PNP Epitaxial Planar Silicon Transistor  
NPN Triple Diffuesd Planar Silicon Transistor  
2SA1740/2SC4548  
High-Voltage Driver Applications  
Features  
Package Dimensions  
unit:mm  
· High breakdown votlage.  
· Adoption of MBIT process.  
2038  
· Excellent h linearlity.  
FE  
[2SA1740/2SC4548]  
E : Emitter  
C : Collector  
B : Base  
( ) : 2SA1740  
SANYO : PCP  
(Bottom view)  
Specifications  
Absolute Maximum Ratings at Ta = 25˚C  
Parameter  
Collector-to-Base Voltage  
Symbol  
Conditions  
Ratings  
Unit  
V
V
(–)400  
(–)400  
(–)5  
CBO  
Collector-to-Emitter Voltage  
Emitter-to-Base Voltage  
Collector Current  
V
V
CEO  
V
V
EBO  
I
(–)200  
(–)400  
1.3  
mA  
mA  
W
C
Collector Current (Pulse)  
Collector Dissipation  
Junction Temperature  
Storage Temperature  
I
CP  
P
C
Tj  
Mounted on ceramic board (250mm2×0.8mm)  
150  
˚C  
˚C  
Tstg  
–55 to +150  
Electrical Characteristics at Ta = 25˚C  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
max  
Collector Cutoff Current  
I
V
V
V
V
V
V
I
=(–)300V, I =0  
E
(–)0.1  
(–)0.1  
200*  
µA  
µA  
CBO  
CB  
EB  
CE  
CE  
CB  
CB  
Emitter Cutoff Current  
I
=(–)4V, I =0  
EBO  
C
h
=(–)10V, I =(–)50mA  
C
=(–)30V, I =(–)10mA  
C
DC Current Gain  
60*  
FE  
Gain-Bandwidth Product  
Output Capacitance  
f
70  
MHz  
pF  
pF  
V
T
C
=(–)30V, f=1MHz  
=(–)30V, f=1MHz  
(5)4  
(4)3  
ob  
Reverse Transfer Capacitance  
Collector-to-Emitter Saturation Voltage  
C
re  
V
=(–)50mA, I =(–)5mA  
(–)0.8  
0.6  
CE(sat)  
C
B
V
Any and all SANYO products described or contained herein do not have specifications that can handle  
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s  
control systems, or other applications whose failure can be reasonably expected to result in serious  
physical and/or material damage. Consult with your SANYO representative nearest you before using  
any SANYO products described or contained herein in such applications.  
SANYO assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other  
parameters) listed in products specifications of any and all SANYO products described or contained  
herein.  
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
83098HA (KT)/7219YT, TS No.3188-1/4  
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