2SA1617VIBUL

更新时间： 2024-01-28 07:15:23

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2SA1617VIBUL 数据手册

2SA1617

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

V_CBO

V_CEO

V_EBO

I_C

Ratings

–55

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

–50

–5

–100

150

°C

Collector power dissipation

Junction temperature

Storage temperature

P_C

150

Tstg

–55 to +150

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min

Typ

Max

Unit

Test conditions

Collector to base breakdown

voltage

V_(BR)CBO

–55

–50

–5

—

I_C= –10 µA, I_E= 0

Collector to emitter breakdown V_(BR)CEO

voltage

—

I_C= –1 mA, R_BE= ∞

I_E= –10 µA, I_C= 0

Emitter to base breakdown

voltage

V_(BR)EBO

Collector cutoff current

Emitter cutoff current

DC current transfer ratio

I_CBO

I_EBO

h_FE*¹

—

–0.5

320

µA

V_CB= –30 V, I_E= 0

—

V_EB= –2 V, I_C= 0

100

—

V_CE= –12 V, I_C= –2 mA

I_C= –10 mA, I_B= –1 mA

Collector to emitter saturation V_CE(sat)

voltage

–0.2

Base to emitter voltage

V_BE

—

–0.8

V_CE= –12 V, I_C= –2 mA

Note: 1. The 2SA1617 is grouped by h_FEas follows.

Grade

Mark

h_FE

VIB

VIC

100 to 200

160 to 320

See charcteristic curves of 2SA1031

123 4 5

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与2SA1617VIBUL相关器件

型号	品牌	描述	获取价格	数据表
2SA1617VIBUR	RENESAS	100mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR, MPAK-3	获取价格
2SA1617VIC01	RENESAS	100mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR, MPAK-3	获取价格
2SA1617VICTL	RENESAS	100mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR, MPAK-3	获取价格
2SA1617VICTR	RENESAS	100mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR, MPAK-3	获取价格
2SA1617VICUL	HITACHI	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, MPAK-3	获取价格
2SA1617VICUL	RENESAS	100mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR, MPAK-3	获取价格