2SA1618-GR

更新时间： 2024-01-04 11:12:22

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体晶体管 PC
页数	文件大小	规格书
4页	214K
描述
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)

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2SA1618-GR 数据手册

2SA1618

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)

2SA1618

Audio Frequency General Purpose Amplifier Applications

Unit: mm

•

Small package (dual type)

High voltage and high current: V

= −50 V, I = −150 mA (max)

CEO

High h

= 120~400

linearity: h

FE: FE

Excellent h

(I = −0.1 mA)/ h

(I = −2 mA)

= 0.95 (typ.)

Complementary to 2SC4207

•

Absolute Maximum Ratings (Ta = 25°C)

(Q1, Q2 common)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

−50

−5

Collector-emitter voltage

Emitter-base voltage

Collector current

JEDEC

JEITA

―

−150

−30

Base current

TOSHIBA

2-3L1A

Collector power dissipation

300

(Note 1)

Weight: 0.014 g (typ.)

Junction temperature

125

°C

Storage temperature range

stg

−55~125

Note:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Total rating

Marking

Equivalent Circuit (top view)

2007-11-01

12 3 4

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