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2SA1122CDUR PDF预览

2SA1122CDUR

更新时间: 2024-02-01 04:31:13
品牌 Logo 应用领域
瑞萨 - RENESAS 放大器光电二极管晶体管
页数 文件大小 规格书
3页 49K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 55V V(BR)CEO, 1-Element, PNP, Silicon, MPAK-3

2SA1122CDUR 技术参数

生命周期:Transferred包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.41Is Samacsys:N
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:55 V
配置:SINGLE最小直流电流增益 (hFE):250
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):200 MHz
Base Number Matches:1

2SA1122CDUR 数据手册

 浏览型号2SA1122CDUR的Datasheet PDF文件第2页浏览型号2SA1122CDUR的Datasheet PDF文件第3页 

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