Datasheet > 2SA1122-E

2SA1122-E

更新时间： 2024-01-06 07:31:31

品牌	Logo	应用领域
科信 - KEXIN		光电二极管
页数	文件大小	规格书
2页	657K
描述
PNP Transistors

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中文翻译

获取价格

技术参数
数据手册

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2SA1122-E 技术参数

生命周期：	Transferred	包装说明：	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code：	unknown	风险等级：	5.41
JESD-30 代码：	R-PDSO-G3	端子数量：	3
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	认证状态：	Not Qualified
表面贴装：	YES	端子形式：	GULL WING
端子位置：	DUAL	Base Number Matches：	1

2SA1122-E 数据手册

SMD Type

TransistIoCrs

PNP Transistors

2SA1122

SOT-23-3

Unit: mm

+0.2

-0.1

2.9

0.4

+0.1

-0.1

Features

Low frequency amplifier

+0.02

-0.02

+0.1

-0.1

0.15

0.95

+0.1

-0.2

1.9

1. Base

2. Emitter

3. Collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

-55

Unit

-55

-5

-100

Collector power dissipation

Junction temperature

P^C

150

Storage temperature

Tstg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

Test conditions

Min

-55

-5

Typ

Max

Unit

Collector to base breakdown voltage

Collector to emitter breakdown voltage

Emitter to base breakdown voltage

Collector cutoff current

V^(BR)CBOIC = -100uA, IE = 0

V^(BR)CEO

IC = -1 mA, RBE =

V^(BR)EBOIE = -100uA, IC = 0

I^CBO

I^EBO

h^FE

VCB = -30 V, IE = 0

VEB = - 4V, IC = 0

-0.1

800

Emitter cutoff current

DC current transfer ratio

VCE = -12 V, IC = -2 mA

160

Collector to emitter saturation voltage

Base to emitter voltage

V^CE(sat)IC = -10 mA, IB = -1 mA

-0.5

-0.75

V^BE

VCE = -12 V, IC = -2 mA

hFE Classification

Type

Range

Marking

2SA1122-C

160-320

2SA1122-D

2SA1122-E

400-800

250-500

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2SA1124R	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 150V V(BR)CEO \| 50MA I(C) \| TO-92VAR
2SA1124S	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 150V V(BR)CEO \| 50MA I(C) \| TO-92VAR
2SA1124T	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 150V V(BR)CEO \| 50MA I(C) \| TO-92VAR