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2SA1085DTZ-E PDF预览

2SA1085DTZ-E

更新时间: 2024-02-18 19:32:05
品牌 Logo 应用领域
瑞萨 - RENESAS /
页数 文件大小 规格书
6页 170K
描述
Silicon PNP Epitaxial

2SA1085DTZ-E 技术参数

生命周期:Transferred包装说明:CYLINDRICAL, O-PBCY-W3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.46最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:120 V配置:SINGLE
最小直流电流增益 (hFE):250JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-W3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:NO端子形式:WIRE
端子位置:BOTTOM晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

2SA1085DTZ-E 数据手册

 浏览型号2SA1085DTZ-E的Datasheet PDF文件第1页浏览型号2SA1085DTZ-E的Datasheet PDF文件第2页浏览型号2SA1085DTZ-E的Datasheet PDF文件第4页浏览型号2SA1085DTZ-E的Datasheet PDF文件第5页浏览型号2SA1085DTZ-E的Datasheet PDF文件第6页 
2SA1084, 2SA1085  
Main Characteristics  
Maximum Collector Dissipation Curve  
Typical Output Characteristics (1)  
–50  
–40  
–30  
–20  
–10  
600  
400  
200  
IB = 0  
–12  
0
–4  
–8  
–16  
–20  
0
50  
100  
150  
Ambient Temperature Ta (°C)  
Collemitter Voltage VCE (V)  
Typical Output Characteristics (2)  
racteristics  
VCE = –12 V  
–20  
–16  
–12  
–8  
–4  
–0.2  
–0.1  
IB
0
–0.2  
–0.4  
–0.6  
–0.8  
–1.0  
0
–4  
Collector
Base to Emitter Voltage VBE (V)  
DC C.  
C
Collector to Emitter Saturation  
Voltage vs. Collector Current  
5,000  
–1.0  
–0.5  
VCE = –12 V  
Pulse  
IC = 10 IB  
2,000  
1,000  
500  
–0.2  
–0.1  
–0.05  
200  
100  
50  
–0.02  
–0.01  
–0.1 –0.3 –1.0 –3  
–10 –30 –100  
–1  
–2  
–5 –10 –20  
–50 –100  
Collector Current IC (mA)  
Collector Current IC (mA)  
Rev.3.00 Aug 10, 2005 page 3 of 5  

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