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2SA1085DTZ-E PDF预览

2SA1085DTZ-E

更新时间: 2024-02-02 18:43:43
品牌 Logo 应用领域
瑞萨 - RENESAS /
页数 文件大小 规格书
6页 170K
描述
Silicon PNP Epitaxial

2SA1085DTZ-E 技术参数

生命周期:Transferred包装说明:CYLINDRICAL, O-PBCY-W3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.46最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:120 V配置:SINGLE
最小直流电流增益 (hFE):250JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-W3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:NO端子形式:WIRE
端子位置:BOTTOM晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

2SA1085DTZ-E 数据手册

 浏览型号2SA1085DTZ-E的Datasheet PDF文件第1页浏览型号2SA1085DTZ-E的Datasheet PDF文件第3页浏览型号2SA1085DTZ-E的Datasheet PDF文件第4页浏览型号2SA1085DTZ-E的Datasheet PDF文件第5页浏览型号2SA1085DTZ-E的Datasheet PDF文件第6页 
2SA1084, 2SA1085  
Electrical Characteristics  
(Ta = 25°C)  
2SA1084  
Typ  
2SA1085  
Typ  
Item  
Symbol  
Min  
Max  
Min  
Max  
Unit  
Test conditions  
Collector to base  
V(BR)CBO  
–90  
–120  
V
IC = –10 µA, IE = 0  
breakdown voltage  
Collector to emitter  
breakdown voltage  
V(BR)CEO  
V(BR)EBO  
ICBO  
–90  
–5  
–120  
–5  
V
V
IC = –1 mA,  
RBE = ∞  
Emitter to base  
breakdown voltage  
IE = –10 µA, IC = 0  
Collector cutoff current  
Emitter cutoff current  
DC current transfer ratio  
–0.1  
–0.1  
800  
–0.1  
–0.1  
800  
µA VCB = –50 V, IE = 0  
µA VEB = –2 V, IC = 0  
IEBO  
1
hFE  
*
250  
250  
VCE = –12 V,  
IC = –2 mA  
Collector to emitter  
saturation voltage  
VCE(sat)  
VBE  
fT  
–0.6  
90  
–0.2  
–0.6  
–0.2  
V
V
IC = –10 mA,  
IB = –1 mA  
Base to emitter voltage  
VCE = –12 V,  
IC = –2 mA  
Gain bandwidth product  
VCE = –12 V,  
= –2 mA  
Collector output  
capacitance  
Cob  
en  
3.5  
0.5  
CB = –10 V, IE = 0,  
f = 1 MHz  
Noise voltage referred to  
input  
V/ VCE = –6V,  
Hz IC = –10 mA,  
f = 1 kHz,  
Rg = 0, f = 1Hz  
Note: 1. The 2SA1084 and 2SA1085 are grou
D
E
250 to 500  
400 to 800  
Rev.3.00 Aug 10, 2005 page 2 of 5  

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