2SA1031-D

更新时间： 2024-01-16 01:25:47

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2SA1031-D 数据手册

2SA1031, 2SA1032

Electrical Characteristics (Ta = 25°C)

2SA1031

2SA1032

Item

Symbol Min Typ Max Min Typ Max Unit Test conditions

Collector to base

breakdown voltage

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

–30

–5

—

–55

–50

–5

—

I_C= –10 µA, I_E= 0

I_C= –1 mA, R_BE= ∞

I_E= –10 µA, I_C= 0

Collector to emitter

breakdown voltage

Emitter to base

breakdown voltage

Collector cutoff current I_CBO

Emitter cutoff current I_EBO

DC current trnsfer ratio h_FE*¹

—

–0.5

500

—

–0.5 µA

320

V_CB= –18 V, I_E= 0

V_EB= –2 V, I_C= 0

—

100

V_CE= –12 V,

I_C= –2 mA

Base to emitter voltage V_BE

—

–0.8

–0.2

—

–0.8

–0.2

—

V_CE= –12 V,

I_C= –2 mA

Collector to emitter

saturation voltage

V_CE(sat)

—

I_C= –10 mA,

I_B= –1 mA

Gain bandwidth product f_T

200 280

200

—

280

3.3

—

MHz V_CE= –12 V,

I_C= –2 mA

Collector output

capacitance

Cob

—

3.3

—

4.0

V_CB= –10 V, I_E= 0,

f = 1 MHz

Noise figure

—

V_CE= –6 V,

I_C= –0.1 mA,

R_g= 500 Ω,

f = 120 Hz

Note: 1. The 2SA1031 and 2SA1032 are grouped by h_FEas follows.

2SA1031

2SA1032

100 to 200

160 to 320

250 to 500

—

1 2 3 456 7 8

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2SA1031TZ	RENESAS	Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-92	获取价格